Backgating characteristics of MODFET structures

A novel dual-gate high electron mobility transistor using a split-gate structure

“…6 In these device measurements a variable back-gate potential could originate at the gate electrodes or their bond pads. The predominant dependence of the observed threshold voltage shift on the detailed shape of the continuous gate, increasing with increasing length of protrusion, indicates that parasitic gating via the substrate can only be a second-order effect.…”

Planar InAs photodiodes fabricated using He ion implantation

“…This technique has previously been used in wider bandgap semiconductors such as GaAs and InP to form planar devices and define device active regions in the fabrication of HEMTs [11], IMPATT diodes [12] and in defining buried heterostructures in laser diodes [13]. A potential advantage to using ion implantation over a diffusion based technique is the greater flexibility in the species to be implanted, as well as potential to achieve greater depths with good uniformity.…”