Characteristics and device applications of erbium doped III-V semiconductors grown by molecular beam epitaxy

Controlling electronic properties of epitaxial nanocomposites of dissimilar materials

“…The size of these precipitates was found to depend on growth temperature, resulting in ErAs particles ranging from about 1.2-3 nm in diameter for samples grown between 550 and 605 1C [18,19]. These ErAs precipitates were found to be detrimental to the photoluminescence properties of both the 4f transition in the Er atoms and the inter-band transitions of the GaAs matrix making the material ill-suited for light emitting devices [19]. However, like the As precipitates in LTG GaAs, the ErAs particles were also shown to reduce the photo-generated carrier lifetime.…”

“…Initial studies of Er-doped GaAs showed the solubility limit around 7 Â 10 17 cm À3 for typical MBE growth conditions above which ErAs precipitates formed within the GaAs matrix [18]. The size of these precipitates was found to depend on growth temperature, resulting in ErAs particles ranging from about 1.2-3 nm in diameter for samples grown between 550 and 605 1C [18,19]. These ErAs precipitates were found to be detrimental to the photoluminescence properties of both the 4f transition in the Er atoms and the inter-band transitions of the GaAs matrix making the material ill-suited for light emitting devices [19].…”

“…In addition to investigating Er doping of GaAs, Sethi and Bhattacharya also investigated Er-doped InGaAs. They found the material to be very conductive for doping ranges from 1 Â 10 16 to 5 Â 10 19 cm À3 with long carrier lifetimes in excess of 100 ps [19].…”

Evolution of THz impulse imaging radar to 1550nm photoconductive switches

“…Seminal studies of homogeneously-doped Er in GaAs showed that it can greatly increase the resistivity while promoting ultrafast behavior [5]. In contrast, Er incorporation into InGaAs creates a substantial drop in the bulk resistivity [6]. Substitutional incorporation of Er in GaAs is limited by the solubility limit at ~7x10 17 cm -3 , above which it tends to incorporate as ErAs nanoparticles [4].…”

Investigations of the spin-Hamiltonian parameters for Er3+ions in AlN crystal

“…Er 3þ -doped semiconductors are of significant interest due to their novel optical properties and the potential application in optical communication and full colour displays [1][2][3][4][5]. In particular, they show sharp emission near 1.54 mm, the low-loss wave-length of silica based optical fibres used in telecommunication system [4,5].…”