Balanced Performance Improvement of a-InGaZnO Thin-Film Transistors Using ALD-Derived Al2O3-Passivated High-k HfGdOx Dielectrics

Zhang, Yongchun; Lin, Yangjian; He, Gang; Ge, Binghui; Liu, Wenjun

doi:10.1021/acsaelm.0c00763

Cited by 25 publications

(9 citation statements)

References 62 publications

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“…The smaller value of the SS indicates the more efficient and rapid switching of the TFT from the off state to the on state. Generally, the value of SS depends on the insulating oxide [52][53][54], the semiconductor surface states [55][56][57] and passivation of the surface [58][59][60]. This index is usually extracted from the reciprocal of the slope of Vgs versus log(Ids) plot by the equation:…”

Section: Resultsmentioning

confidence: 99%

The Effect of Sampling Interval and Various Difference Approximation Methods on Extracting the Subthreshold Swing in InGaZnO Thin Film Transistor

Liu

Song

et al. 2021

IEEE Access

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In this work, the effect of gate voltage sampling interval (ΔVgs) and various difference approximation methods on extracting the value of subthreshold swing (SS) have been investigated in detail for InGaZnO thin film transistor (TFT). The values of extracted SS under the ΔVgs altered from 1 V to 0.03125 V for the same InGaZnO TFT exhibit a large disparity and the minimum value of SS with ΔVgs of 0.03125 V has 3~4 times less than the ΔVgs of 1 V by the same approximation method. Furthermore, the impact of various difference approximation methods on extracting SS have also been involved. Moreover, an empirical formula is proposed to estimate the proper sampling interval for accurate approximating the SS. The proposed phenomenon and method in this work could be a meaningful reference for extracting the SS and other parameters in InGaZnO TFTs.

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Section: Resultsmentioning

confidence: 99%

The Effect of Sampling Interval and Various Difference Approximation Methods on Extracting the Subthreshold Swing in InGaZnO Thin Film Transistor

Liu

Song

et al. 2021

IEEE Access

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“…are widely used as dielectrics for low-power FETs. [216][217][218] However, cracks usually occur when the metal oxide dielectrics are under mechanical bending, which limits their application for flexible FETs.…”

Section: Polymer Composite Based Gate Dielectricsmentioning

confidence: 99%

“…are widely used as dielectrics for low‐power FETs. [ 216–218 ] However, cracks usually occur when the metal oxide dielectrics are under mechanical bending, which limits their application for flexible FETs. On the other hand, the polymer dielectrics have the property of excellent flexibility for flexible FETs, but the dielectric constants of the polymer dielectric layers are usually low, obstructing their applications for low‐power FETs.…”

Section: Functional Polymer Composite Based Electronicsmentioning

confidence: 99%

Advanced Functional Composite Materials toward E‐Skin for Health Monitoring and Artificial Intelligence

Sun

Lai

Tang

et al. 2022

Adv Materials Technologies

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Electronic skin (E‐skin), especially the wearable sensors efficiently detect various stimuli attracted huge research interest owing to their potential applications in health monitoring and artificial intelligence. On the other hand, functional polymer composites possessing excellent properties such as light weight, good flexibility, and superior electrical performances, are promising candidates as building blocks for flexible electronics. Accordingly, tremendous efforts are devoted to the development of polymer composites with functional properties for E‐skin applications. Here, recent advances on the controlled fabrication of various fillers based functional polymer composites and their diverse applications in E‐skin are reviewed. In addition, contemporary studies on fabrication strategies, working mechanisms, and device performance for E‐skin based on the functional polymer composites are reviewed, including flexible pressure sensors, strain sensors, temperature sensors, energy harvesters, and transistors. Furthermore, the applications of functional composite based flexible electronics in healthcare and artificial intelligence are discussed. Finally, the existing challenges and opportunities for the functional composite materials based E‐skin are summarized.

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“…The typical voltage-transfer characteristics (VTCs) of the inverter are shown in Figure 6j, where the output high voltage (V OH ) is close to the supply voltages (V DD ), while the output low voltage (V OL ) is close to 0 V. This benefits from the low off-state current of TFT and good negative bias stability, allowing that the inverter can effectively convert the input voltage signal and display good full swing characteristics. [60,61] Moreover, a sufficiently low subthreshold swing can ensure a good gain for the inverter. [49] Figure 6k shows the voltage gain values (-∂V OUT /∂V IN ) under different V DD .…”

Section: Reliability Evolution and Application Of DC Hj Tftsmentioning

confidence: 99%

Electrospun Stacked Dual‐Channel Transistors with High Electron Mobility Using a Planar Heterojunction Architecture

Jiang

et al. 2022

Adv Elect Materials

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Thin‐film transistors based on metal oxide semiconductors have become a mainstream technology for application in driving low‐cost backplanes of active matrix liquid crystal displays. Although significant progress has been made in traditional marketable devices based on physical vapor deposition derived metal oxides, it has still been hindered by low yield and poor compatibility. Fortunately, developing solution‐based 1D nanofiber networks to act as the fundamental building blocks for transistor has proven to be a simpler, higher‐throughput approach. However, oxide transistors based on such princesses suffer from degraded carrier mobility and operational instability, preventing the ability of such devices from replacing present polycrystalline Si technologies. Herein, it is shown that double channel heterojunction transistors with high electron mobility (>40 cm2 V−1 s−1) and operational stability can be achieved from electrospun double channels composed of In2O3 and ZnO layers. Adjusting the stacking order and the stacking density of In2O3 and ZnO layers can effectively optimize the interface electron trap, leading to the formation of 2D electron gas and the reduction of stress‐induced instability. These findings further elucidate the significant advance of electrospinning‐derived double channel heterojunction transistors toward practical applications for future low‐cost and high‐performance electronics.

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Balanced Performance Improvement of a-InGaZnO Thin-Film Transistors Using ALD-Derived Al₂O₃-Passivated High-k HfGdO_x Dielectrics

Cited by 25 publications

References 62 publications

The Effect of Sampling Interval and Various Difference Approximation Methods on Extracting the Subthreshold Swing in InGaZnO Thin Film Transistor

The Effect of Sampling Interval and Various Difference Approximation Methods on Extracting the Subthreshold Swing in InGaZnO Thin Film Transistor

Advanced Functional Composite Materials toward E‐Skin for Health Monitoring and Artificial Intelligence

Electrospun Stacked Dual‐Channel Transistors with High Electron Mobility Using a Planar Heterojunction Architecture

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