Ballistic electron emission microscopy study of barrier height inhomogeneities introduced in Au/n-Si Schottky contacts by a HF pretreatment

Abstract

Articles you may be interested inSchottky barrier height measurements of Cu/Si(001), Ag/Si(001), and Au/Si(001) interfaces utilizing ballistic electron emission microscopy and ballistic hole emission microscopy Mechanisms for the reduction of the Schottky barrier heights of high-quality nonalloyed Pt contacts on surfacetreated p-GaNThe distribution of Schottky barrier heights over the contact area in Au/n-Si diodes was determined by ballistic electron emission microscopy. For samples on which an aqueous HF pretreatment of the Si substrate was applied, the histogram contains several high barrier Gaussian distribution components. After a short rinse, in de-ionized water or methanol, it was mainly the most important lower Gaussian component which was left. Using additional x-ray photoemission spectroscopy and atomic force microscopy measurements allowed us to propose a model, wherein negatively charged species containing F at the interface, are thought to be responsible for the high barrier Gaussian components.

Metal–organic interfaces at the nanoscale

“…There is experimental evidence [28][29][30] that nanometer-sized lateral variations in SBH exist at many metal semiconductor interfaces. Olbrich et al [28] have recently shown that potential pinch-off effect can be observed near intentionally introduced low-barrier height areas in Au/Co/GaAsP diodes, and that these low-barrier areas correlate well with the effective barrier height of the entire diode.…”

Electrical characteristics of Au/Pyronine-B/moderately doped n-type InP Schottky structures in a wide temperature range

“…This suggests that the organic pyronine-B layer modifies the electrical properties of the n-InP Schottky diode. The studies in literature have shown that effective Schottky barrier could be either increased or decreased by using organic thin layer on inorganic Si semiconductor [61][62][63][64][65][66]. It is evaluated that the interface properties of the diode is passivated by using organic layer surface to reduce the interaction between metal and inorganic.…”

Laterally inhomogeneous barrier analysis of the methyl violet/p-Si organic/inorganic hybrid Schottky structures

“…Also, several authors have reported experimental evidence that nanometer-sized lateral variations in BHs exist [45][46][47]. This result has been attributed to the barrier inhomogeneities.…”