Laterally inhomogeneous barrier analysis of the methyl violet/p-Si organic/inorganic hybrid Schottky structures

Güllü, Ömer; Barış, Özlem; Bı̇ber, M.; Türüt, A.

doi:10.1016/j.apsusc.2007.10.082

Cited by 62 publications

(18 citation statements)

References 53 publications

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“…Furthermore, this also shows the I-V and C-V characteristics have different nature. Thus, the barrier heights obtained from I-V to C-V measurements are not the same [50].…”

Section: Interface State Density Properties Of the Au/dna/n-si Diodesmentioning

confidence: 97%

Electrical and interface properties of Au/DNA/n-Si organic-on-inorganic structures

Okur

Yakuphanoğlu

Ozsoz

et al. 2009

Microelectronic Engineering

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“…Furthermore, this also shows the I-V and C-V characteristics have different nature. Thus, the barrier heights obtained from I-V to C-V measurements are not the same [50].…”

Section: Interface State Density Properties Of the Au/dna/n-si Diodesmentioning

confidence: 97%

Electrical and interface properties of Au/DNA/n-Si organic-on-inorganic structures

Okur

Yakuphanoğlu

Ozsoz

et al. 2009

Microelectronic Engineering

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“…As could be seen from Fig. 3, there is a linear relationship between U bo and n, and such behavior may be explained by lateral in-homogeneities of the BHs in the diode [3,33,34]. As seen in Fig.…”

Section: Methodsmentioning

confidence: 80%

Single Gaussian distribution of barrier height in Al/PS–ZnPc/p-Si type Schottky barrier diode in temperature range of 120–320 K

Sarıyıldız

Vural

Evecen

et al. 2014

J Mater Sci: Mater Electron

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Possible current-transport mechanism in aluminum/polystrene-zincphthalocyanine/ptype silicon Schotky barrier diode (Al/PS-ZnPc/p-Si; SBD), for the forward bias current-voltage (I-V) characteristics were carried out in the temperature range of 120-320 K. The high value of ideality factor (n), especially at low temperatures, was attributed to the existence of PS layer, barrier in-homogeneities and particular density distribution of surface states between metal and semiconductor. An abnormal decrease in the zero-bias barrier height (BH) and increase in n with decreasing temperature which leads to non-linearity in the Richardson plot, have been observed. Linear relationship between BH and n was also observed. BH was plotted as a function of q/2kT to obtain evidence of Gaussian distribution (GD) of the BHs. The mean BH and its standard deviation (r) were obtained as 1.03 eV and 0.117 V from the slope and intercept of this plot, respectively. Thus, the modified ln(Io/T 2 ) -q 2 ro 2 /2k 2 T 2 versus q/kT plot gives mean BH and the modified Richardson constant A Ã mod as 1.043 eV and 29.824 A cm -2 K -2 , respectively. This value of the Richardson constant is very close to the theoretical value of 32 A cm -2 K -2 for p-type Si. Therefore, non-ideal behavior of forward-bias I-V characteristics in Al/PS-ZnPc/p-Si might be successfully explained in terms of the thermionic emission mechanism with single GD of BHs.

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“…The barrier height inhomogeneity causes big ideality factors, which need to be improved by good uniformity of interface structure [24,25]. The experimental effective barrier heights and ideality factors determined from the I-V measurements vary from diode to diode, even if Schottky structures are identically fabricated [18][19][20][21][22][23]. Chawanda et al [18] have experimentally investigated the relationship between the ideality factors and effective barrier heights of Pd/n-Ge Schottky contact.…”

Section: Introductionmentioning

confidence: 97%

“…These deviations have been represented by assuming the existence of the barrier height inhomogeneities [13][14][15][16][17][18][19][20][21][22][23]. Sullivan et al [13] and Tung [14] have modeled imperfect metal-semiconductor structures by supposing lateral variation of barrier heights.…”

Section: Introductionmentioning

confidence: 99%

Analysis of inhomogeneous device parameters using current–voltage characteristics of identically prepared lateral Schottky structures

et al. 2015

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We have identically fabricated 50 dots of Au/n-Si/Al Schottky structures and investigated the mean values of diode parameters from current-to-voltage (I-V) characteristics at 300 K. The values of diode parameters are determined from I-V characteristics, and Cheung and the modified Norde functions are varied from diode to diode although the Schottky structures are identically fabricated. The experimental values of ideality factor (n) and barrier height (U B ) for 50 dots of the Au/n-Si/Al Schottky structures have ranged from 1.048 to 1.695 and from 0.708 to 0.807 eV, respectively. The interface state densities (N ss ) are approximately obtained from 2 9 10 13 to 2 9 10 11 eV -1 cm -2 in the energy range from E c -0.45 to E c -0.75 eV, respectively. These findings can be referred to lateral barrier inhomogeneities of Schottky diodes. The distributions of all calculated parameters have been fitted by means of Gaussian function. The mean n and U B values have been found to be 1.316 ± 0.213 and 0.758 ± 0.030 eV, respectively. Furthermore, the value of lateral homogenous barrier height for 50 dots of Schottky structures is determined as 0.802 eV from the linear relationship between n and U B .

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Laterally inhomogeneous barrier analysis of the methyl violet/p-Si organic/inorganic hybrid Schottky structures

Cited by 62 publications

References 53 publications

Electrical and interface properties of Au/DNA/n-Si organic-on-inorganic structures

Electrical and interface properties of Au/DNA/n-Si organic-on-inorganic structures

Single Gaussian distribution of barrier height in Al/PS–ZnPc/p-Si type Schottky barrier diode in temperature range of 120–320 K

Analysis of inhomogeneous device parameters using current–voltage characteristics of identically prepared lateral Schottky structures

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