Ballistic/quasi-ballistic transport in nanoscale transistor

Natori, Kenji

doi:10.1016/j.apsusc.2008.02.150

Cited by 49 publications

(30 citation statements)

References 14 publications

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“…Many authors have showed that ballistic or quasi-ballistic transport is highly expected in nanodevices, different from microdevices [2]. However, in the traditional approach, the amplitude distribution (d) is evaluated assuming the macroscopic behaviour modelled through the mobility.…”

Section: (B) Nanoscale Effects In Semiconductor Devices: Ballistic Efmentioning

confidence: 99%

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Collective Poisson process with periodic rates: applications in physics from micro-to nanodevices

Silva

Lamb

Wirth

2011

Phil. Trans. R. Soc. A.

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Continuous reductions in the dimensions of semiconductor devices have led to an increasing number of noise sources, including random telegraph signals (RTS) due to the capture and emission of electrons by traps at random positions between oxide and semiconductor. The models traditionally used for microscopic devices become of limited validity in nano-and mesoscale systems since, in such systems, distributed quantities such as electron and trap densities, and concepts like electron mobility, become inadequate to model electrical behaviour. In addition, current experimental works have shown that RTS in semiconductor devices based on carbon nanotubes lead to giant current fluctuations. Therefore, the physics of this phenomenon and techniques to decrease the amplitudes of RTS need to be better understood. This problem can be described as a collective Poisson process under different, but time-independent, rates, t c and t e , that control the capture and emission of electrons by traps distributed over the oxide. Thus, models that consider calculations performed under time-dependent periodic capture and emission rates should be of interest in order to model more efficient devices. We show a complete theoretical description of a model that is capable of showing a noise reduction of current fluctuations in the time domain, and a reduction of the power spectral density in the frequency domain, in semiconductor devices as predicted by previous experimental work. We do so through numerical integrations and a novel Monte Carlo Markov chain (MCMC) algorithm based on microscopic discrete values. The proposed model also handles the ballistic regime, relevant in nano-and mesoscale devices. Finally, we show that the ballistic regime leads to nonlinearity in the electrical behaviour.

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Section: (B) Nanoscale Effects In Semiconductor Devices: Ballistic Efmentioning

confidence: 99%

“…In particular, shocking physical effects have been pointed out by several authors (e.g. [2]). The problems caused by RTS noise include: flash memory failures [3], mobile phone malfunctions and other important failures in micro-mesonanodevices.…”

Section: Introductionmentioning

confidence: 99%

Collective Poisson process with periodic rates: applications in physics from micro-to nanodevices

Silva

Lamb

Wirth

2011

Phil. Trans. R. Soc. A.

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“…These thermal vibrations cause waves of compression and expansion to move through the crystal and thus scatter the electrons (Heiblum & Eastman, 1987). Therefore, achieving ballistic transport in Si-based MOS transistors is only an ideal situation (Natori, 2008).…”

Section: Fm a Q Ementioning

confidence: 99%

“…device measurements. Here, we will introduce two equations that can satisfy the above criteria (i) Based on the concept of the effective saturation velocity (v sat_eff ) , which is a function of μ eff and temperature (Lau et al , 2008, b) and (ii) Based on the virtual source model (Khakifirooz et al, 2009) (Natori, 2008). Note that λ is the mean free path of the carrier.…”

Section: Wwwintechopencommentioning

confidence: 99%

The Evolution of Theory on Drain Current Saturation Mechanism of MOSFETs from the Early Days to the Present Day

Yang¹,

Lai²,

Chan³

2010

Solid State Circuits Technologies

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“…Recently, the ballistic or the quasi-ballistic transport in nanoscale devices [17][18][19][20] has been frequently analyzed in the reflection-transmission regime. The concept of the "kT layer" [21][22][23] proposed in the analysis is effective for understanding the underlying physics.…”

Section: Incorporation Of Energy Relaxation Into Modelmentioning

confidence: 99%

New Solution to High-Field Transport in Semiconductors: II. Velocity Saturation and Ballistic Transmission

Natori

2009

jjap

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High-field transport in semiconductor diodes at room temperature is analyzed in the reflection-transmission regime. The pseudo-one-dimensional Boltzmann equation with a constant electric field is transformed into a pair of carrier flux equations. They are analytically solved neither with the relaxation time approximation nor with the perturbation expansion.The carrier energy relaxation due to optical phonon emission is essential in high-field transport. The current-and velocity-field characteristics are closely related to flux transmission through a specific layer, in which the elastic scattering is dominant and the optical phonon emission is absent. If the transmission coefficient is much less than unity, the proportionality of the current to the field results as the Ohm's law in high-field range. The current and velocity tend to saturate when the coefficient approaches unity (ballistic transmission). This result provides simple insight into transport in nanoscale devices.

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Ballistic/quasi-ballistic transport in nanoscale transistor

Cited by 49 publications

References 14 publications

Collective Poisson process with periodic rates: applications in physics from micro-to nanodevices

Collective Poisson process with periodic rates: applications in physics from micro-to nanodevices

The Evolution of Theory on Drain Current Saturation Mechanism of MOSFETs from the Early Days to the Present Day

New Solution to High-Field Transport in Semiconductors: II. Velocity Saturation and Ballistic Transmission

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