Ballistic Transport in 1D GaAs/AlGaAs Heterostructures

Clarke, W.A.; Simmons, M. Y.; Liang, C.-T.; Sujan, G.K.

doi:10.1016/b978-0-44-453153-7.00082-1

Cited by 7 publications

(4 citation statements)

References 118 publications

(221 reference statements)

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“…consult articles by Beenakker and van Houten [13], van Houten, Beenakker and van Wees [39], and for a more recent focus, by Clarke, Simmons and Liang [40]. Very useful magazine-style discussions of low dimensional physics and the Kondo effect in quantum dots can be found in articles by Berggren and Pepper [41], and Kouwenhoven and Glazman [42], respectively.…”

Section: Content and Structure Of This Reviewmentioning

confidence: 99%

“…Readers seeking a general background on nanoelectronics and low-dimensional devices can consult books by Davies [37] and Ferry et al [38]. For very comprehensive reviews of earlier studies of quantised 1D conductance, readers should consult articles by Beenakker and van Houten [13], van Houten et al [39], and for a more recent focus, by Clarke et al [40]. Very useful magazine-style discussions of low-dimensional physics and the Kondo effect in quantum dots can be found in articles by Berggren and Pepper [41], and Kouwenhoven and Glazman [42], respectively.…”

Section: Content and Structure Of This Reviewmentioning

confidence: 99%

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What lurks below the last plateau: experimental studies of the 0.7 × 2e²/hconductance anomaly in one-dimensional systems

Micolich¹

2011

J. Phys.: Condens. Matter

121

130

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The integer quantised conductance of one-dimensional electron systems is a well-understood effect of quantum confinement. A number of fractionally quantised plateaus are also commonly observed. They are attributed to many-body effects, but their precise origin is still a matter of debate, having attracted considerable interest over the past 15 years. This review reports on experimental studies of fractionally quantised plateaus in semiconductor quantum point contacts and quantum wires, focusing on the 0.7 × 2e(2)/h conductance anomaly, its analogues at higher conductances and the zero-bias peak observed in the dc source-drain bias for conductances less than 2e(2)/h.

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Section: Content and Structure Of This Reviewmentioning

confidence: 99%

Section: Content and Structure Of This Reviewmentioning

confidence: 99%

What lurks below the last plateau: experimental studies of the 0.7 × 2e²/hconductance anomaly in one-dimensional systems

Micolich¹

2011

J. Phys.: Condens. Matter

121

130

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“…The first demonstration of a 2DEG was in a semiconductor/insulator interface, namely a silicon metal-oxide field effect transistor (Si MOSFET). Nevertheless, the GaAs/AlGaAs heterostructure is considered the prototypical example of 2DEGs. − The lattice match between GaAs and AlGaAs yields a crystalline interface, free of scattering, leading to long electron mean free paths and mobilities exceeding 10 7 cm 2 /(V s). , …”

Section: Introductionmentioning

confidence: 99%

“…Because of the flexibility of confining the underlying 2DEG with gates in any desired shape, from 1D wires to quantum dots that can host single electrons, , 2DEGs have been the workhorse of mesoscopic transport for several decades − . However, the thin film configurations hosting 2DEGs impose severe limitations on device design.…”

Section: Introductionmentioning

confidence: 99%

Electronic Transport and Quantum Phenomena in Nanowires

Badawy,

Bakkers

2024

Chem. Rev.

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Nanowires are natural one-dimensional channels and offer new opportunities for advanced electronic quantum transport experiments. We review recent progress on the synthesis of nanowires and methods for the fabrication of hybrid semiconductor/ superconductor systems. We discuss methods to characterize their electronic properties in the context of possible future applications such as topological and spin qubits. We focus on group III−V (InAs and InSb) and group IV (Ge/Si) semiconductors, since these are the most developed, and give an outlook on other potential materials.

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Self-consistent Analysis for Optimization of AlGaAs/GaAs Based Heterostructure

Paramasivam,

Gowthaman,

Srivastava

2023

J. Electr. Eng. Technol.

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The heterostructures are suitable for developing high-performance electronic and optoelectronic devices. In this work, a significant interest in the design and analysis of compound semiconductor Aluminium Gallium Arsenide (AlGaAs) and Gallium Arsenide (GaAs) heterostructures has been realized. These structures are fabricated with alternating layers of GaAs (a direct bandgap material) and AlGaAs (an indirect bandgap material) and have been used to design a range of high-performance devices, including lasers, solar cells, and field-effect transistors. A 30 nm AlGaAs consisting of a middle layer between two GaAs layers with a GaAs substrate has been reported. This work has been carried out at 300 K utilizing a quantum transport and self-consistent method for the proposed AlGaAs/GaAs one-dimensional heterostructure with a gate length of 2 nm and a voltage varying from 0 to 0.1 V. The measured values of doping density (nd) and electron density (ne) of AlGaAs/GaAs one-dimensional heterostructure are 8.96 × 1011 cm−3 and 2 × 1026 cm−3, respectively. The system response to geometric changes in several parameters has been realized. Hence, confined restricted states were computed using wave functions and energies. The GaAs layer on top of quantum well heterostructure interfaces has been used to modulate the wave functions (eigenstates) resulting in pseudo-one dimensional or small-dimension eigenstates. In this work, a comprehensive analysis of 1D AlGaAs/GaAs heterostructure through benchmarking with several homo-structures (various thicknesses) has been performed.

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Ballistic Transport in 1D GaAs/AlGaAs Heterostructures

Cited by 7 publications

References 118 publications

What lurks below the last plateau: experimental studies of the 0.7 × 2e²/hconductance anomaly in one-dimensional systems

What lurks below the last plateau: experimental studies of the 0.7 × 2e²/hconductance anomaly in one-dimensional systems

Electronic Transport and Quantum Phenomena in Nanowires

Self-consistent Analysis for Optimization of AlGaAs/GaAs Based Heterostructure

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Ballistic Transport in 1D GaAs/AlGaAs Heterostructures

Cited by 7 publications

References 118 publications

What lurks below the last plateau: experimental studies of the 0.7 × 2e2/hconductance anomaly in one-dimensional systems

What lurks below the last plateau: experimental studies of the 0.7 × 2e2/hconductance anomaly in one-dimensional systems

Electronic Transport and Quantum Phenomena in Nanowires

Self-consistent Analysis for Optimization of AlGaAs/GaAs Based Heterostructure

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Product

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What lurks below the last plateau: experimental studies of the 0.7 × 2e²/hconductance anomaly in one-dimensional systems

What lurks below the last plateau: experimental studies of the 0.7 × 2e²/hconductance anomaly in one-dimensional systems