Ballistic Transport in Gate-All-Around Nanowire Transistors

Abstract

In this paper, we propose a 1D numerical quantum simulator for symmetric gate-allaround nanowire transistors with cylindrical cross section within the effective mass approximation. The simulator is based on a self consistent Schrödinger-Poisson solver, using the finite difference method, in conjunction with a current model assuming ballistic behavior for the transistor. The solutions obtained were first verified analytically when it was available. Electron distribution profiles and I-V characteristics for transistors with different device parameters are numerically evaluated using the proposed simulator. The effects of quantum confinement and low dimensions on these characteristics are indicated.