The thermoelectric Seebeck and Peltier effects of a single walled carbon nanotube (SWCNT) quantum dot nanodevice are investigated, taking into consideration a certain value of applied tensile strain and induced ac-field with frequency in the terahertz (THz) range. This device is modeled as a SWCNT quantum dot connected to metallic leads. These two metallic leads operate as a source and a drain. In this three-terminal device, the conducting substance is the gate electrode. Another metallic gate is used to govern the electrostatics and the switching of the carbon nanotube channel. The substances at the carbon nanotube quantum dot/ metal contact are controlled by the back gate. Results show that both the Seebeck and Peltier coefficients have random oscillation as a function of gate voltage in the Coulomb blockade regime for all types of SWCNT quantum dots. Also, the values of both the Seebeck and Peltier coefficients are enhanced, mainly due to the induced tensile strain. Results show that the three types of SWCNT quantum dot are good thermoelectric nanodevices for energy harvesting (Seebeck effect) and good coolers for nanoelectronic devices (Peltier effect).

In this paper, we propose a 1D numerical quantum simulator for symmetric gate-allaround nanowire transistors with cylindrical cross section within the effective mass approximation. The simulator is based on a self consistent Schrödinger-Poisson solver, using the finite difference method, in conjunction with a current model assuming ballistic behavior for the transistor. The solutions obtained were first verified analytically when it was available. Electron distribution profiles and I-V characteristics for transistors with different device parameters are numerically evaluated using the proposed simulator. The effects of quantum confinement and low dimensions on these characteristics are indicated.