Ballistic transport in nanowire through junctions of narrow–wide–narrow geometry

Nonoyama, Shinji; Honma, Yukari; Nakamura, Atsunobu

doi:10.1016/j.physleta.2015.01.025

Cited by 5 publications

(3 citation statements)

References 23 publications

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“…Here, we concentrate on experimental study of geometry‐induced doping (G‐doping) . Related quantum systems have also been investigated . The NG geometry belongs to a wide class of nonintegrable quantum systems .…”

Section: Introductionmentioning

confidence: 99%

Geometry‐induced quantum effects in periodic nanostructures

Tavkhelidze

Jangidze

Mebonia

et al. 2017

Physica Status Solidi (a)

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Recently, geometry-induced quantum effects in periodic nanostructures were introduced and observed. Nanograting has been shown to dramatically improve thermoelectric and electron emission properties, and originate a geometry induced doping or G-doping. Here, we concentrate on experimental investigation of G-doping. We fabricate nanograting (NG) layers and measure their electron transport properties. The grating was fabricated on the surface of a silicon on insulator (SOI) wafer device layer using laser interference lithography followed by reactive ion etching. Next, large square islands were shaped in the device layer.The characteristics of NG and plain islands were compared to investigate G-doping. Resistivity temperature dependences were recorded in the range of 4-300 K. For all 21 samples, the NG layers show a 2-3 order of magnitude reduction in resistivity with respect to the plain layer. Hall coefficient and thermopower measurements demonstrate that the NG layers are n-type. Obtained G-doping level corresponded to an "effective impurity" concentration of 10 18 cm À3 . The dependence of the resistivity and Hall coefficient on temperature and magnetic field were recorded in the ranges of 2-300 K and 0-3 T, respectively.

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Section: Introductionmentioning

confidence: 99%

Geometry‐induced quantum effects in periodic nanostructures

Tavkhelidze

Jangidze

Mebonia

et al. 2017

Physica Status Solidi (a)

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“…A relatively new numerical approach used for quantum systems is the electromagnetic analog circuit method [13,14]. Related quantum systems, such as the narrow-wide-narrow geometry quantum wire [15], periodic curved surfaces [16,17], electron waveguides [18], and strain-driven nanostructures [19], have also been investigated.…”

Section: Introductionmentioning

confidence: 99%

Density of quantum states in quasi-1D layers

Kakulia

Tavkhelidze

Gogoberidze

et al. 2016

Physica E: Low-dimensional Systems and Nanostructures

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Recently, new quantum effects have been studied in thin nanograting layers. Nanograting on the surface imposes additional boundary conditions on the electron wave function and reduces the density of states (DOS). When the nanograting dimensions are close to the de Broglie wavelength, the DOS reduction is considerable and leads to changes in the layer properties. DOS calculations are challenging to perform and are related to the quantum billiard problem. Performing such calculations requires finding the solutions for the time-independent Schrödinger equation with Dirichlet boundary conditions. Here, we use a numerical method, namely the method of auxiliary sources, which offers significant computational cost reduction relative to other numerical methods. We found the first five eigenfunctions for the nanograting layer and compared them with the corresponding eigenfunctions for a plain layer by calculating the correlation coefficients. Furthermore, the numerical data were used to analyze the DOS reduction. The nanograting is shown to reduce the probability of occupation of a particular quantum state, reducing the integrated DOS by as much as 4.1 -fold. This reduction in the DOS leads to considerable changes in the electronic properties.

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“…The nanograting layer is a quasi-1D system in the range 0<a<2H. It is a 2D quantum well for a=0 and a system of 1D quantum wires for a=2H [28,29].…”

Section: Methodsmentioning

confidence: 99%

Nanograting layers of Si

et al. 2019

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The paper presents research regarding the complex behavior of materials based on Si and SiO2, geometrically processed at nano-scale. The geometry, which induces the doping effect (G-doping), occurred when it was possible to fabricate nanograting structures. Studies on the influence of nanograting structures on the properties of materials have shown that this process may lead to effects similar to those created by doping with donors. The resistivity values measured in Si-based nanograting layers, for example, were approximately 10−2 Ω cm, similar to those of Si semiconductors doped with phosphorus ‘impurities’ having a volume concentration of 1018 cm−3. This increase in electronic properties, as a result of the nanograting structure, seems to appear due to the fact that the electrons rejected in the process are placed in the structure vacancies. It has been experimentally proven that, in the case of semiconductors, the nanograting structuring makes the rejected electrons from the valence band to be placed in the conduction band. In the paper, after samples fabrication with nanograting structures on Si films placed on SiO2 support, the I–V curves of the obtained layers were drawn, both by measuring in four points and also in two points. The resistivity measurements were made in two directions: along and perpendicular to the strips of the structure and showed the existence of an anisotropy.

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Ballistic transport in nanowire through junctions of narrow–wide–narrow geometry

Cited by 5 publications

References 23 publications

Geometry‐induced quantum effects in periodic nanostructures

Geometry‐induced quantum effects in periodic nanostructures

Density of quantum states in quasi-1D layers

Nanograting layers of Si

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