Band alignment between 4H-SiC and atomic-layer-deposited ZrO<sub>2</sub>determined by X-ray photoelectron spectroscopy

Ye, Gang; Wang, Hong; Ji, R.

doi:10.7567/apex.8.091302

Cited by 8 publications

(3 citation statements)

References 24 publications

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“…39 The larger conduction band offset is sufficient to provide a significant electron confinement potential for the heterojunction and restrains the electron export. 40 In conclusion, the band alignment of PLD-TiO 2 /FTO heterojunction and the effect of annealing were studied by high resolution XPS measurement. The valence band offset and corresponding conduction band offset for TiO 2 /FTO interface were found to be 0.29 and 0.61 eV, respectively for the as-grown sample, and 1.06 and -0.16 eV, respectively for the annealed sample.…”

Section: Aip Advances 6 015314 (2016)mentioning

confidence: 99%

Band alignment of TiO2/FTO interface determined by X-ray photoelectron spectroscopy: Effect of annealing

et al. 2016

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The energy band alignment between pulsed-laser-deposited TiO2 and FTO was firstly characterized using high-resolution X-ray photoelectron spectroscopy. A valence band offset (VBO) of 0.61 eV and a conduction band offset (CBO) of 0.29 eV were obtained across the TiO2/FTO heterointerface. With annealing process, the VBO and CBO across the heterointerface were found to be -0.16 eV and 1.06 eV, respectively, with the alignment transforming from type-I to type-II. The difference in the band alignment is believed to be dominated by the core level down-shift of the FTO substrate, which is a result of the oxidation of Sn. Current-voltage test has verified that the band alignment has a significant effect on the current transport of the heterojunction.

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Section: Aip Advances 6 015314 (2016)mentioning

confidence: 99%

Band alignment of TiO2/FTO interface determined by X-ray photoelectron spectroscopy: Effect of annealing

et al. 2016

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“…Although the ZrO 2 /SiC MOS structure achieves relatively high breakdown voltages (V B = 23V) [26][27][28], the application of ZrO 2 as a High-k material on its own as a gate oxygen layer is somewhat unsatisfactory when compared to the performance of conventional SiO 2 applications on Si as well as SiC substrates [29]. This may be due to the low valence band offset of ZrO 2 (ΔE V = 0.52 eV) [8,30].…”

Section: Resultsmentioning

confidence: 99%

“…Among the common high-k gate dielectric films, zirconium dioxide (ZrO 2 ) has a relatively high k value (k = 20-25) and is thus an attractive candidate material [8][9][10]. There have been numerous studies on ZrO 2 combined with Si substrates [10][11][12][13][14][15][16][17][18][19].…”

Section: Introductionmentioning

confidence: 99%

Electronic properties of ZrO₂ films fabricated via atomic layer deposition on 4H-SiC and Si substrates

Wang,

Zeng,

Zhang

et al. 2024

Mater. Res. Express

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Silicon carbide (SiC), an important semiconductor material used in high-power devices, faces the problem of gate oxygen layer formation in traditional Si MOS devices. In view of this, an innovative approach was adopted in the present work to replace the conventional SiO2 as the gate oxygen layer with a high-k material (ZrO2) so as to investigate its effect on the electrical characteristics of the appliance. In particular ZrO2 films were deposited on SiC and Si substrates by atomic layer deposition (ALD), and Al was used as the electrode. The atomic force microscopy (AFM) microregion scan revealed a highly flat surface with Rq<1 nm after the ALD growth of ZrO2 layer. The sample surface analysis via X-ray photoelectron spectroscopy (XPS) suggested the presence of a small amount of ZrOx components. According to the electron energy loss spectrum (EELS), the band gap width (Eg) of this ALD ZrO2 dielectric was 5.45 eV, which met the requirements for high-quality 4H-SiC-related MOS devices. The electrical properties of the samples were then studied, and the maximum breakdown electric field of the MOS capacitor structure on the SiC substrate was obtained to be more than 10 MV/cm, i.e., nearly twice that of the Si substrate. Based on capacitance-voltage (C-V) measurements, the interface defect density (Dit) near the conduction band of the MOS capacitive structure of the SiC substrate was only on the order of 1012 eV-1 cm-2. The movable charge Neffof the oxide layer was also controlled at 1012 cm-2. Therefore, the overall performance of the ZrO2/SiC structure in terms of electrical properties exceeds that of the ZrO2/Si structure and previously reported counterparts. Thus, the combination of the high-k material (ZrO2) and SiC as the substrates in MOS capacitor structures is a very promising research direction.

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Improved interface and electrical properties of atomic layer deposited Al 2 O 3 /4H-SiC

Suvanam

Usman

Martin

et al. 2018

Applied Surface Science

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Band alignment between 4H-SiC and atomic-layer-deposited ZrO₂determined by X-ray photoelectron spectroscopy

Cited by 8 publications

References 24 publications

Band alignment of TiO2/FTO interface determined by X-ray photoelectron spectroscopy: Effect of annealing

Band alignment of TiO2/FTO interface determined by X-ray photoelectron spectroscopy: Effect of annealing

Electronic properties of ZrO₂ films fabricated via atomic layer deposition on 4H-SiC and Si substrates

Improved interface and electrical properties of atomic layer deposited Al 2 O 3 /4H-SiC

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Band alignment between 4H-SiC and atomic-layer-deposited ZrO2determined by X-ray photoelectron spectroscopy

Cited by 8 publications

References 24 publications

Band alignment of TiO2/FTO interface determined by X-ray photoelectron spectroscopy: Effect of annealing

Band alignment of TiO2/FTO interface determined by X-ray photoelectron spectroscopy: Effect of annealing

Electronic properties of ZrO2 films fabricated via atomic layer deposition on 4H-SiC and Si substrates

Improved interface and electrical properties of atomic layer deposited Al 2 O 3 /4H-SiC

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Product

Resources

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Band alignment between 4H-SiC and atomic-layer-deposited ZrO₂determined by X-ray photoelectron spectroscopy

Electronic properties of ZrO₂ films fabricated via atomic layer deposition on 4H-SiC and Si substrates