Band Alignment in MoS<sub>2</sub>/WS<sub>2</sub> Transition Metal Dichalcogenide Heterostructures Probed by Scanning Tunneling Microscopy and Spectroscopy

Hill, Heather M.; Rigosi, Albert F.; Rim, Kwang Taeg; Flynn, George W.; Heinz, Tony F.

doi:10.1021/acs.nanolett.6b01007

Cited by 276 publications

(233 citation statements)

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“…Transition metal dichalcogenides (TMDCs) [1][2][3] are gaining a great deal of research interests, especially, from the past few decades due to their potential applications in the spintronics [4][5][6][7][8] and as well in the optoelectronics [9][10][11][12][13] because of their wide range of electronic properties starting from the metallic [14][15][16], to the semimetallic [17][18][19][20], to the semiconducting [21][22][23][24], and to the Mott-insulators [25][26][27], obtained mainly by the band engineering [28][29][30]. In addition, the diversity of electronic properties of TMDCs includes the charge density wave (CDW) [31,32], the magnetism [33][34][35], and the superconductivity [36][37][38].…”

Section: Introductionmentioning

confidence: 99%

Metal-chalcogen bond-length induced electronic phase transition from semiconductor to topological semimetal in ZrX2 ( X=Se and Te)

et al. 2020

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Using angle resolved photoemission spectroscopy (ARPES) and density functional theory (DFT) calculations we studied the low-energy electronic structure of bulk ZrTe2. ARPES studies on ZrTe2 demonstrate free charge carriers at the Fermi level, which is further confirmed by the DFT calculations. An equal number of hole and electron carrier density estimated from the ARPES data, points ZrTe2 to a semimetal. The DFT calculations further suggest a band inversion between Te p and Zr d states at the Γ point, hinting at the non-trivial band topology in ZrTe2. Thus, our studies for the first time unambiguously demonstrate that ZrTe2 is a topological semimetal. Also, a comparative band structure study is done on ZrSe2 which shows a semiconducting nature of the electronic structure with an indirect band gap of 0.9 eV between Γ(A) and M (L) high symmetry points. In the below we show that the metal-chalcogen bond-length plays a critical role in the electronic phase transition from semiconductor to a topological semimetal ingoing from ZrSe2 to ZrTe2. arXiv:1907.03987v1 [cond-mat.mtrl-sci]

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Section: Introductionmentioning

confidence: 99%

Metal-chalcogen bond-length induced electronic phase transition from semiconductor to topological semimetal in ZrX2 ( X=Se and Te)

et al. 2020

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“…For HSs between different TMDs, band alignments have been calculated with DFT [83,84,85,86,87,88] (see below for details), and measured experimentally for vertical [89,90] and lateral [31,36] experimental works consider vertical HSs, Zhang et al [36] have recently studied band alignment in WSe 2 -MoS 2 lateral HSs. A type-II band alignment has been inferred in vertical MoTe 2 -MoS 2 HSs from SKPFM and Raman measurements, and theoretically calculated to be 0.66 eV [92].…”

Section: Band Alignmentmentioning

confidence: 99%

Lateral heterostructures and one-dimensional interfaces in 2D transition metal dichalcogenides

Ávalos-Ovando

Mastrogiuseppe

Ulloa

2019

J. Phys.: Condens. Matter

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The growth and exfoliation of two-dimensional (2D) materials have led to the creation of edges and novel interfacial states at the juncture between crystals with different composition or phases. These hybrid heterostructures (HSs) can be built as vertical van der Waals stacks, resulting in a 2D interface, or as stitched adjacent monolayer crystals, resulting in one-dimensional (1D) interfaces. Although most attention has been focused on vertical HSs, increasing theoretical and experimental interest in 1D interfaces is evident. In-plane interfacial states between different 2D materials inherit properties from both crystals, giving rise to robust states with unique 1D non-parabolic dispersion and strong spinorbit effects. With such unique characteristics, these states provide an exciting platform for realizing 1D physics. Here, we review and discuss advances in 1D heterojunctions, with emphasis on theoretical approaches for describing those between semiconducting transition metal dichalcogenides M X 2 (with M =Mo, W and X= S, Se, Te), and how the interfacial states can be characterized and utilized. We also address how the interfaces depend on edge geometries (such as zigzag and armchair) or strain, as lattice parameters differ across the interface, and how these features affect excitonic/optical response. This review is intended to serve as a resource for promoting theoretical and experimental studies in this rapidly evolving field.

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“…Due to the combined effect of exciton binding energy, exciton localization and short lifetime in the order of picoseconds and the slow catalytic processes in the order of s to ms, the majority of photo-generated charge carriers are lost by radiative or non-radiative relaxation processes [31]. These loss channels are expected to be significantly reduced for lateral or vertical van der Waals heterostructures with a type-II band alignment such as WS 2 /MoS 2 [73]. The in-plane electric field across the heterojunction will effectively separate the photo-generated charge carriers causing an accumulation of electrons in one layer and of holes in the other layer.…”

Section: Laser Power Dependent Photo-electrochemical Activity Of Mosmentioning

confidence: 99%

Hydrogen evolution activity of individual mono-, bi-, and few-layer MoS 2 towards photocatalysis

Parzinger

Mitterreiter

Stelzer

et al. 2017

Applied Materials Today

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b s t r a c tWe investigate the hydrogen evolution activity in the dark and under illumination above the band gap of individual mono-, bi-and few-layer (bulk) MoS 2 flakes. We demonstrate that the electrocatalytic activity of 2H-MoS 2 immersed in 1 M H 2 SO 4 increases with decreasing number of layers. For monolayers, we observe the highest exchange current density, which is one magnitude larger than in the bulk case. The onset potential scales with the number of layers, which is consistent with a previous report, suggesting that hopping transport across inter-layer barriers within the MoS 2 flakes is responsible for this scaling.A specially designed micro-sized catalytic cell enables us to investigate individual MoS 2 flakes with well-known geometry and edge-to-surface ratio. Taking these geometric parameters into account, we tentatively attribute the catalytic activity mainly to sulfur vacancies in the basal planes acting as active sites. The associated turn over frequencies (TOF) for mono-and bi-layer MoS 2 yield values higher than 10 3 s −1 at an overpotential of −0.2 V vs. RHE. In view of light driven hydrogen evolution as a means of solar energy conversion, we investigate the photocatalytic activity of few-layer MoS 2 under white light illumination.

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Band Alignment in MoS₂/WS₂ Transition Metal Dichalcogenide Heterostructures Probed by Scanning Tunneling Microscopy and Spectroscopy

Cited by 276 publications

References 60 publications

Metal-chalcogen bond-length induced electronic phase transition from semiconductor to topological semimetal in ZrX2 ( X=Se and Te)

Metal-chalcogen bond-length induced electronic phase transition from semiconductor to topological semimetal in ZrX2 ( X=Se and Te)

Lateral heterostructures and one-dimensional interfaces in 2D transition metal dichalcogenides

Hydrogen evolution activity of individual mono-, bi-, and few-layer MoS 2 towards photocatalysis

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Band Alignment in MoS2/WS2 Transition Metal Dichalcogenide Heterostructures Probed by Scanning Tunneling Microscopy and Spectroscopy

Cited by 276 publications

References 60 publications

Metal-chalcogen bond-length induced electronic phase transition from semiconductor to topological semimetal in ZrX2 ( X=Se and Te)

Metal-chalcogen bond-length induced electronic phase transition from semiconductor to topological semimetal in ZrX2 ( X=Se and Te)

Lateral heterostructures and one-dimensional interfaces in 2D transition metal dichalcogenides

Hydrogen evolution activity of individual mono-, bi-, and few-layer MoS 2 towards photocatalysis

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Band Alignment in MoS₂/WS₂ Transition Metal Dichalcogenide Heterostructures Probed by Scanning Tunneling Microscopy and Spectroscopy