Band alignment of type I at (100)ZnTe/PbSe interface

Abstract

A junction of lattice-matched cubic semiconductors ZnTe and PbSe results in a band alignment of type I so that the narrow band gap of PbSe is completely within the wider band gap of ZnTe. The valence band offset of 0.27 eV was found, representing a minor barrier during injection of holes from PbSe into ZnTe. Simple linear extrapolation of the valence band edge results in a smaller calculated band offset, but a more elaborate square root approximation was used instead, which accounts for parabolic bands. PbSe was electrodeposited at room temperature with and without Cd2+ ions in the electrolyte. Although Cd adsorbs at the surface, the presence of Cd in the electrolyte does not influence the band offset.

Electrical and Optical Properties of γ-SnSe: A New Ultra-narrow Band Gap Material

“…Its potential applications extend from infrared detectors, thermal imaging to photothermal conversion, and thermoelectric devices. ,, The absorption onset at ∼12.9 μm makes it suitable for thermal imaging and photodetection in the 8–12 μm atmospheric window as well as in the 3–5 μm range. Additionally, its ultranarrow band gap will create a type I band alignment with most semiconductors, which can also be utilized in heterojunction applications such as suggested for PbSe . For example, the good lattice match and chemical compatibility with the α-SnSe phase are likely to facilitate the formation of a high-quality heterojunction with low concentration of interface defects.…”

“…Additionally, its ultranarrow band gap will create a type I band alignment with most semiconductors, which can also be utilized in heterojunction applications such as suggested for PbSe. 58 For example, the good lattice match and chemical compatibility with the α-SnSe phase are likely to facilitate the formation of a high-quality heterojunction with low concentration of interface defects. The γ-SnSe phase can also be utilized to form an ohmic contact between the absorber and the back contact metal in α-SnSe-based solar cells, which are very sensitive to the formation of a Schottky barrier there.…”

Hot carrier solar cell as thermoelectric device

“…The band offsets at ZnTe/PbSe and PbSe/ZnO interfaces are shown in Figure . The band diagram implements the idea of the hot carrier solar cell in Figure B.…”

“…Band alignment in the double heterostructure ZnTe/PbSe/ZnO . The numbers shown near the interfaces are the band offset in electronvolts.…”

“…The photovoltage due to hot carriers depends on the Seebeck coefficients in ZnTe and ZnO at their specific doping levels, and on the carrier temperature in the PbSe absorber. [19,20]. The numbers shown near the interfaces are the band offset in electronvolts.…”