No abstract

Improvement of solar cell efficiency beyond the Shockley-Queisser limit requires introduction of new physical concepts. One such concept is hot carrier solar cell, proposed more than three decades ago and still not impressively demonstrated in experiment. Here we show that hot carrier solar cell may be considered as thermoelectric device based on Seebeck effect. This enables one to describe the operation of hot carrier solar cell in a simple way. We fabricated a prototype of the hot carrier solar cell showing open circuit voltage at room temperature larger than the band gap in the absorber material. Extrapolation of open circuit voltage to absolute zero temperature results in barrier height depending on light intensity, interpreted by splitting of quasi-Fermi levels between the regions of different carrier temperature. Properties of the prototype solar cell may be described by kinetic transport theory as well as from the point of view of the thermoelectric theory. 114

A junction of lattice-matched cubic semiconductors ZnTe and PbSe results in a band alignment of type I so that the narrow band gap of PbSe is completely within the wider band gap of ZnTe. The valence band offset of 0.27 eV was found, representing a minor barrier during injection of holes from PbSe into ZnTe. Simple linear extrapolation of the valence band edge results in a smaller calculated band offset, but a more elaborate square root approximation was used instead, which accounts for parabolic bands. PbSe was electrodeposited at room temperature with and without Cd2+ ions in the electrolyte. Although Cd adsorbs at the surface, the presence of Cd in the electrolyte does not influence the band offset.