Band Anticrossing in GaInNAs Alloys

Shan, W.; Walukiewicz, W.; Ager, Joel W.; Haller, E. E.; Geisz, John F.; Friedman, Daniel; Olson, J. M.; Kurtz, Sarah

doi:10.1103/physrevlett.82.1221

Cited by 1,613 publications

(1,242 citation statements)

References 16 publications

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“…The conduction band splitting has been unambiguously observed in GaN x As 1-x and Ga 1-y In y N x As 1-x using photomodulation spectroscopy. 6,43 Shown in The anti-crossing behavior of two strongly interacting energy levels with distinctly different pressure dependencies is unmistakably observed. The E_ transition has a strong dependence at low pressures and gradually saturates at high pressures, whereas the E + transition has a weak dependence upon pressure at low pressures and displays a much stronger dependence at high pressures.…”

Section: Direct Evidence Of Band Splitting and Related Anticrossing Cmentioning

confidence: 99%

“…[3][4][5] Furthermore, a new optical transition (E + ) above the fundamental band gap energy has been observed. 6,7 As one quantitative example, the incorporation of only one percent of nitrogen into GaAs induces a strikingly large reduction of 0.18 eV in the fundamental band-gap energy. 8 This reduction is much larger than the changes observed when alloying different III-V compound semiconductors at its percent level.…”

Section: Introductionmentioning

confidence: 99%

“…[9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26] In this article, we show that the effect of nitrogen on the electronic band structure of dilute nitrides can be consistently described in terms of an anti-crossing interaction between localized nitrogen states and the extended conduction-band states of the semiconductor matrix. 6,27 The interaction leads to a significant modification of the band structure of the dilute III-N-V alloys. All the experimentally observed dramatic changes of the electrical and optical properties that have been observed experimentally can be fully explained by this interaction.…”

Section: Introductionmentioning

confidence: 99%

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Band anticrossing in dilute nitrides

Shan

Walukiewicz

et al. 2004

J. Phys.: Condens. Matter

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Alloying III-V compounds with small amounts of nitrogen leads to dramatic reduction of the fundamental band-gap energy in the resulting dilute nitride alloys. The effect originates from an anti-crossing interaction between the extended conduction-band states and localized N states.The interaction splits the conduction band into two nonparabolic subbands. The downward shift of the lower conduction subband edge is responsible for the N-induced reduction of the fundamental band-gap energy. The changes in the conduction band structure result in significant increase in electron effective mass and decrease in the electron mobility, and lead to a large enhance of the maximum doping level in GaInNAs doped with group VI donors. In addition, a striking asymmetry in the electrical activation of group IV and group VI donors can be attributed to mutual passivation process through formation of the nearest neighbor group-IV donor nitrogen pairs.

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Section: Direct Evidence Of Band Splitting and Related Anticrossing Cmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Band anticrossing in dilute nitrides

Shan

Walukiewicz

et al. 2004

J. Phys.: Condens. Matter

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“…7 While the ab initio approaches have not been able to provide an explanation for the observed band bowing, other more phenomenological models have been proposed. The two-level band anticrossing model (BAC) 9 is the most widely applied one. In the BAC model the band gap narrowing results from the interaction of the nitrogen-induced states and the lowest conduction band states of the host material.…”

Section: Introductionmentioning

confidence: 99%

Origin of band gap bowing in dilute GaAs1−xNxand GaP1−<

et al. 2013

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“…Anticrossing effects between the localized impurity states and the delocalized states of the matrix result in the lowering of the conduction band edge, as described by the band anticrossing model [1]. In the case of GaN x As 1-x , substitution of 1 mol % of N on the As sublattice results in a reduction of the bandgap by as much as 180 meV [2].…”

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GaN(x)As(1-x) Quantum Structures Fabricated by FIB Patterning

Alberi

Minor

Chung

et al. 2005

MAM

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The GaN x As 1-x system belongs to a class of materials known as highly mismatched semiconductor alloys (HMA) in which a small amount of the anion is replaced by an isovalent impurity of a much different electronegativity. Anticrossing effects between the localized impurity states and the delocalized states of the matrix result in the lowering of the conduction band edge, as described by the band anticrossing model [1]. In the case of GaN x As 1-x , substitution of 1 mol % of N on the As sublattice results in a reduction of the bandgap by as much as 180 meV [2]. The ability to manipulate the bandgap by carefully controlling small concentrations of N makes this system wellsuited for the formation of quantum wires and dots by alternative synthesis routes. Here we describe a technique to construct quantum structures from a GaN 0.015 As 0.985 film using a focused ion beam.An FEI Strata 235 dual-beam focused ion beam (FIB) operated at an accelerating voltage of 30 keV and a beam current of 1pA was used to selectively amorphize patterned lines by implanting Ga + ions. The ions were implanted at a 7° angle to the normal of a 10nm thick GaN 0.012 As 0.988 film grown by molecular beam epitaxy on a semi-insulating GaAs substrate. Upon rapid thermal annealing (RTA), N is released from the As sublattice as these amorphous regions undergo solid-phase epitaxial regrowth, producing GaAs barriers surrounding the unimplanted GaN 0.012 As 0.988 regions [3]. Depending on the implanted pattern, quantum wires or dots are generated.Cross-sectional transmission electron microscopy (XTEM) analysis of the implant profile was carried out on FIB-patterned GaAs substrates and GaN 0.012 As 0.988 films both before and after an RTA at 800 °C for 15s. The test structure consisted of 9 lines of implant doses ranging from 10 13 to 10 15 ions/cm 2 , which were controlled by varying the ion beam scan times. The XTEM specimens were prepared in the FIB by a lift-out technique, and the surface of the sample was protected with a Pt layer deposited with the electron beam prior to ion milling. Figure 1 shows a montage of TEM micrographs from amorphized lines in a test structure used for preliminary investigation. The dark regions near the surface reveal the FIB-induced damage caused by the implantation of Ga ions. The spatial extent of amorphization depends on the implant dose, which is presumably due to the Gaussian distribution of the ion beam flux. XTEM of samples that were amorphized and then annealed show that even at the higher implant doses the amorphized lines recrystallized. Figure 2 shows two examples of an annealed sample, one with and one without residual defects.Ion implantation using a FIB followed by RTA is demonstrated to be a viable method for amorphizing and regrowing selected regions of a film in such a way that quantum structures

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Band Anticrossing in GaInNAs Alloys

Cited by 1,613 publications

References 16 publications

Band anticrossing in dilute nitrides

Band anticrossing in dilute nitrides

Origin of band gap bowing in dilute GaAs1−xNxand GaP1−<

GaN(x)As(1-x) Quantum Structures Fabricated by FIB Patterning

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