Band-edge photoluminescence in nanocrystalline ZnO:In films prepared by electrostatic spray deposition

Hieu, Dam; Binh, Le Thi Thanh; Bình, Nguyễn Thanh; Khanh, Le Duy; Long, Nguyen Ngoc

doi:10.1016/j.apsusc.2005.04.011

Cited by 32 publications

(14 citation statements)

References 22 publications

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“…8) Teke et al reported the observation of a clearly resolved DAP band together with its corresponding LO-phonon replicas located successively on the lower energy side by separation of about 72 meV in single crystal ZnO. 3) However, other groups 9,10) have observed a broad DAP band that is similar to our case. One reason for such band broadening could be due to the difference in the saturation of close pairs.…”

Section: Resultscontrasting

confidence: 50%

Photoluminescence Properties and Morphologies of Submicron-Sized ZnO Crystals Prepared by Ultrasonic Spray Pyrolysis

Htay

Itoh

Hashimoto

et al. 2008

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Spectral features of the near-band-edge photoluminescence (PL) of submicron-sized ZnO crystals such as nanoplatelets, nanowires, and nanorods grown by an ultrasonic spray pyrolysis (USP) technique were investigated. The measurements of time-integrated and time-resolved PL spectra were performed in the temperature range of 8-300 K under various excitation densities by using the fourth harmonics (4.66 eV) of a Nd:YAG laser. Exciton-related emission bands were clearly observed in the ZnO crystals having different morphologies. In nanoplatelets, an emission band originating from radiative recombination of donor-acceptor pairs was also found at around 3.17 eV, indicating the existence of acceptor centers. The binding energies of donor and acceptor were about 53 and 200 meV, respectively. In nanowires, the intensity of an emission band peaking at 3.32 eV obeyed a quadratic dependency on the density of excitation. This fact shows that an inelastic exciton-exciton scattering process is efficient in the nanowires because of high crystal quality.

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Section: Resultscontrasting

confidence: 50%

Photoluminescence Properties and Morphologies of Submicron-Sized ZnO Crystals Prepared by Ultrasonic Spray Pyrolysis

Htay

Itoh

Hashimoto

et al. 2008

jjap

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“…used to enhance the n-type conductivity of ZnO films [5][6][7][8][9][10][11] . Fewer studies have been performed on quadrivalent dopants as titanium, which have one more valence than the trivalent cations and can provide two free electrons per atom to improve the conductivity of the ZnO host.…”

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confidence: 99%

Coordination chemistry of titanium and zinc in Ti(1−x)Zn2xO2 (0 ≤x≤ 1) ultrathin films grown by DC reactive magnetron sputtering

et al. 2012

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X-ray Absorption Near Edge Structure (XANES) and Rutherford Backscattering Spectroscopy (RBS) were used to explore the structural phase and composition transitions of ultrathin films with Ti (1-x) Zn 2x O 2 stoichiometries, from very 10 low (~0.5 at.%) to high (~25at.%) titanium content. In this way, the coordination chemistry of Ti 4+ and Zn 2+ cations was examined for a wide range of oxide compositions.Transition metal doping and formation of mixed oxides are 15 widely used mechanisms to improve the intrinsic properties of binary oxides. Both procedures have been decisive to explain the spectacular increase of applications based on ZnO and TiO 2 films. Proven applications of metal-doped ZnO in optoelectronic 20 devices include photovoltaic and dye sensitized solar cells, flat panel displays, photodetectors, gas sensors, light emitting diodes and blue laser diodes [1][2][3][4] . The vast majority of previous work on doped ZnO films is related to doping with group III elements. In particular Al, Ga and In trivalent cations have been extensively 25 used to enhance the n-type conductivity of ZnO films [5][6][7][8][9][10][11] . Fewer studies have been performed on quadrivalent dopants as titanium, which have one more valence than the trivalent cations and can provide two free electrons per atom to improve the conductivity of the ZnO host. In particular the Ti 4+ cation has a slightly smaller 30 radius (6.8 nm) than Zn 2+ (7.4 nm) and, thus, it can act as a suitable donor in ZnO films. Some authors have reported an enhancement of the conductivity in Ti-ZnO (TZO) films for low titanium content (<1.5 at%) [12][13][14][15][16] . However, the conduction mechanism of the metal-semiconductor transition in ZnO is still unclear [17][18] . In turn, ZnO-TiO 2 mixed oxides have been widely studied to be used as gas sensors [19][20] inverse spinel crystal structure with a unit cell a = 0.846 nm), zinc meta-titanate ZnTiO 3 (either cubic inverse defect spinel, a = 0.840 nm or hexagonal ilmenite structure, a = 0.507 nm) and Zn 2 Ti 3 O 8 (cubic inverse defect spinel, a = 0.843 nm) are still under debate 27-29 . 50 Despite the extensive studies performed on the individual TZO and ZnO-TiO2 systems in areas such as photovoltaics, photocatalysis or optoelectronics, there is a lack of a systematic work to fully understand how the Ti incorporation takes place in the ZnO oxide structure either as dopant or to form mixed oxides. 55In particular, one of the current technological challenges is the elucidation of such mechanism for nanostructured and ultrathin films due to the size-dependent electronic and optical properties of these semiconductor materials, as discussed in ref. O (α, α) 16 O at that particular energy and, therefore, to improve the sensitivity to oxygen. The chemical composition values have been extracted using the RBX software 34 . The X-ray Absorption Near Edge Structure (XANES) measurements were done at the PM4 beamline of the Bessy II 95 synchrotron facility (Berlin, Germany), using the SurICat endstation. Th...

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“…Figure 10 shows the integrated PL intensity of D X and BF line as a function of temperature. It was found that the integrated PL intensity could be fitted by formula (3) [10]:…”

Section: Resultsmentioning

confidence: 99%

Indium-doped zinc oxide nanometre thick disks synthesised by a vapour-phase transport process

Tuyên¹,

Long²,

Hoa

et al. 2009

Journal of Experimental Nanoscience

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Indium-doped ZnO nanometre thick disks were successfully fabricated by thermal evaporation of a powder mixture of ZnO, In 2 O 3 , and graphite without catalyst. Incorporation of indium metal in the nanodisks during the synthesis was not successful due to the formation of In 2 O 3 phase. SEM images show that some ZnO disks have perfect hexagonal shape. These disks are about 1-5 mm in size and 40-100 nm in thickness. X-ray diffraction, Raman, transmission electron microscopy, and energy dispersive spectroscopy observations show that the disks are single crystalline ZnO with wurtzite structure. Effect of indium doping on the structure, morphology, optical absorption, and photoluminescence of the nanodisks are studied.

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Band-edge photoluminescence in nanocrystalline ZnO:In films prepared by electrostatic spray deposition

Cited by 32 publications

References 22 publications

Photoluminescence Properties and Morphologies of Submicron-Sized ZnO Crystals Prepared by Ultrasonic Spray Pyrolysis

Photoluminescence Properties and Morphologies of Submicron-Sized ZnO Crystals Prepared by Ultrasonic Spray Pyrolysis

Coordination chemistry of titanium and zinc in Ti(1−x)Zn2xO2 (0 ≤x≤ 1) ultrathin films grown by DC reactive magnetron sputtering

Indium-doped zinc oxide nanometre thick disks synthesised by a vapour-phase transport process

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