Band gap and structural parameter variation of CuInSe2(1-x)S2x solid-solution in the form of thin films

Abstract

Al~traet. CulnSe=o _zlS~x thin films were deposited by spray pyrolysis. Lattice parameters o and c, for all composition parameters X, were calculated from the Phillips X-ray dlffractometer. The structure remained tetragonal chateopyrite throughout, Optical band gap (E~) was determined for the composition parameter X from the transmittance study at room temperature. Variation of E~, a and c with X was found to be linear, Keywords, Ternary semiconductor compounds; spray pyrolysis; chalcopyrite structure.

Synthesis and Modified of Poly(Vinyl chloride) Contains Triazole Moieties and Studying the Optical Properties of New Polymers

“…(2). The observed behavior suggests allowed direct transition for amorphous material [14][15][16][17][18]. The values of optical energy gap Eopt.…”

n-CuInS2/polysulfide photoelectrochemical solar cells prepared by spray pyrolysis

“…CuInS 2 photoanode in the form of thin film was deposited on SnO2 deposited glass substrates so as to cover half the area. The detailed preparation of CuInS 2 thin films was discussed elsewhere (Tembhurkar and Hirde 1992). The aqueous solutions of cupric chloride, indium trichloride and thio-urea of 0-02 M were mixed in the proportion of 1:1-2:3.2 by volume for spraying the films on hot glass substrates.…”

“…The electrode, thus prepared was used as photoanode. The conductivity of the films was measured using four-probe method and was found to be of the order of 2"4 f~-1 cm-t. Thickness of the photoanode was of the order 2-3/an measured using weighing method by taking density of the film as 4.71 g/cm 2 (Tembhurkar and Hirde 1992).…”

“…The photoelectrochemical cells based on semiconductors form an important class of solar energy conversion system. They have the advantage of being used for both photovoltaic and chemical energy conversion (Gerischer 1977;Kung et al 1977;Veh and Hackerman 1977;Shoonman 1982), CuInS 2 has a direct band gap of about 1.43 eV (Tembhurkar and Hirde 1992), a value which is close to optimal for terrestrial photovoltaics.…”

Variation of some physical properties of CuInS2 films by substrate temperature

“…Several techniques have been investigated to prepare CuInS 2 thin films. Thin films of ternary compound have been prepared by several methods such as evaporation [7][8][9], electro-deposition [11] [12], chemical bath deposition [13] and spray pyrolysis [5,6,[14][15][16][17][18][19][20][21][22]. Electronic structures were reported by Jaffe and Junger [23], there are fundamental role to deep study with support (ideal) to all new researchers.…”