Band gap control of hydrogenated amorphous silicon carbide films prepared by hot-wire chemical vapor deposition

Tabata, Akimori; Kuroda, Masami; Mori, Mitsuhiro; Mizutani, Takashi; Suzuoki, Yasuo

doi:10.1016/j.jnoncrysol.2004.03.033

Cited by 24 publications

(13 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Despite the use of a SiO 2 -coated titanium reference piece, the measured spectrum may contain some influence from the SiO 2 adhesion layer which should be considered. The peaks exhibited agree with previous literature reports on PECV-deposited SiC [72][73][74][75][76][77][78]. At 790 cm −1 , Si-C stretching vibrations correspond to a strong peak [74][75][76].…”

Section: Resultssupporting

confidence: 90%

Demonstration of a SiC Protective Coating for Titanium Implants

et al. 2020

View full text Add to dashboard Cite

To mitigate the corrosion of titanium implants and improve implant longevity, we investigated the capability to coat titanium implants with SiC and determined if the coating could remain intact after simulated implant placement. Titanium disks and titanium implants were coated with SiC using plasma-enhanced chemical vapor deposition (PECVD) and were examined for interface quality, chemical composition, and coating robustness. SiC-coated titanium implants were torqued into a Poly(methyl methacrylate) (PMMA) block to simulate clinical implant placement followed by energy dispersive spectroscopy to determine if the coating remained intact. After torquing, the atomic concentration of the detectable elements (silicon, carbon, oxygen, titanium, and aluminum) remained relatively unchanged, with the variation staying within the detection limits of the Energy Dispersive Spectroscopy (EDS) tool. In conclusion, plasma-enhanced chemical vapor deposited SiC was shown to conformably coat titanium implant surfaces and remain intact after torquing the coated implants into a material with a similar hardness to human bone mass.

show abstract

Section: Resultssupporting

confidence: 90%

Demonstration of a SiC Protective Coating for Titanium Implants

et al. 2020

View full text Add to dashboard Cite

show abstract

“…The Si-C band, which is expected to be observed in the range 600-1000 cm −1 , is very weak therefore each FTIR spectrum has been carefully de-convoluted in the range 500-1100 cm −1 . Each deconvoluted spectra show three absorption peaks 630 cm -1 , 780 cm -1 and 1000 cm -1 corresponding to Si-H wagging or rocking [35], Si-C stretching/Si-CH 3 wagging [36], C-H n wagging [37][38] vibration modes, respectively of nc-SiC:H. These results also confirm the formation of nc-SiC:H films by HW-CVD method using C 2 H 6 precursor.…”

Section: Fourier Transform Infra-red (Ftir) Spectroscopysupporting

confidence: 68%

Synthesis of nanocrystalline silicon carbide thin films by HW-CVD using ethane carbon precursor for photo detector application

Pawbake

Waman

Waykar

et al. 2015

2015 2nd International Symposium on Physics and Technology of Sensors (ISPTS)

View full text Add to dashboard Cite

Hydrogenated nanocrystalline silicon carbide (nc-SiC:H) films were prepared by hot wire chemical vapor deposition (HW-CVD) method using ethane (C 2 H 6 ) as a carbon precursor. The influence of deposition pressure on structural and optical properties was investigated. The formation of nc-SiC:H films was confirmed by low angle x-ray diffraction (XRD), Raman spectroscopy and Fourier transform infrared (FTIR) spectroscopy analysis. An inverse relation between deposition pressure and deposition rate was observed. Optical band gap values, E Tauc and E 04 increases with increase in deposition pressure. In fact, optical band gap values estimated from E 04 method was found higher than the E Tauc values calculated fromTauc's plot. Finally, at optimized deposition pressure (450 mTorr), a photo detector having configuration glass/nc-SiC:H/Al have been fabricated and its photo response was studied. Further study is required to improve the quality of nc-SiC:H films to make use in photo detectors.

show abstract

“…As seen from the FTIR spectra, the films deposited at = 200 mTorr show the various peaks centered at ∼618 cm −1 , ∼668 cm −1 , ∼780 cm −1 , ∼1010 cm −1 , 1250 cm −1 , and 2070 cm −1 corresponding to Si-H wagging or rocking [30], Si-C stretching [31], Si-C (stretching)/Si-CH 3 (wagging) [27,32,33], C-H wagging [33,34], Si-CH 3 bending [31], and Si-H stretching ( = 1, 2) [35] modes, respectively. The absorption band ∼2800-3000 cm −1 is attributed to stretching vibration of C-H groups in sp 2 (2880 cm −1 ) and sp 3 (2960 cm −1 ) configurations [36].…”

Section: Fourier Transform Infrared (Ftir) Spectroscopy Analysismentioning

confidence: 91%

Hydrogenated Silicon Carbide Thin Films Prepared with High Deposition Rate by Hot Wire Chemical Vapor Deposition Method

Kamble

Waman

Mayabadi

et al. 2014

Journal of Coatings

View full text Add to dashboard Cite

Structural, optical, and electrical properties of hydrogenated silicon carbide (SiC:H) films, deposited from silane (SiH4) and methane (CH4) gas mixture by HW-CVD method, were investigated. Film properties are carefully and systematically studied as function of deposition pressure which is varied between 200 mTorr and 500 mTorr. The deposition rate is found to be reasonably high (9.4 nm/s<rd<15.54 nm/s). Formation of SiC:H films is confirmed by FTIR, Raman, and XPS analysis. XRD and Raman analysis revealed that with increasing deposition pressure amorphization occurs in SiC:H films. FTIR spectroscopy analysis shows that bond density of C–H decreases while Si–C and Si–H bond densities increase with increasing deposition pressure. Total hydrogen content increases with increasing deposition pressure and was found to be <20 at.%. The absence of band ~1300–1600 cm−1in the Raman spectra implies negligible C–C bond concentration and formation of nearly stoichiometric SiC:H films. The band gap shows increasing trend with increasing deposition pressure. The high value of Urbach energy suggests increased structural disorder in SiC:H films. Finally, it has been concluded that CH4can be used as effective carbon source in HW-CVD method to prepare stoichiometric SiC:H films.

show abstract

Band gap control of hydrogenated amorphous silicon carbide films prepared by hot-wire chemical vapor deposition

Cited by 24 publications

References 10 publications

Demonstration of a SiC Protective Coating for Titanium Implants

Demonstration of a SiC Protective Coating for Titanium Implants

Synthesis of nanocrystalline silicon carbide thin films by HW-CVD using ethane carbon precursor for photo detector application

Hydrogenated Silicon Carbide Thin Films Prepared with High Deposition Rate by Hot Wire Chemical Vapor Deposition Method

Contact Info

Product

Resources

About