Band-gap engineered digital alloy interfaces for lower resistance vertical-cavity surface-emitting lasers

Peters, M.G.; Thibeault, B.J.; Young, D.B.; Scott, J.W.; Peters, Frank H.; Gossard, A. C.; Coldren, L.A.

doi:10.1063/1.110156

Cited by 98 publications

(32 citation statements)

References 8 publications

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“…These methods include step grading combined with delta doping 4,5 and modulation doped parabolic grades. 6,7 Previous work at Sandia 8 used cyclical effusion cell temperature variation to produce mirrors with piecewise linearly graded alloy composition by molecular beam epitaxy ͑MBE͒. These grading approaches were successful at reducing vertical mirror resistance but often at the expense of other important properties.…”

Section: ͓S0003-6951͑96͒00704-9͔mentioning

confidence: 99%

Uniparabolic mirror grading for vertical cavity surface emitting lasers

Lear

Schneider

1996

Applied Physics Letters

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We report details of mirror grading profiles for high efficiency vertical cavity surface emitting lasers. The mirrors provide low vertical resistance in conjunction with improvements in optical reflectivity, thermal conductivity, and lateral electrical conductivity in comparison to earlier grading profiles. The enhancement of these properties is verified by a comparison of thermal resistance and total electrical resistance for lasers of varying size.

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Section: ͓S0003-6951͑96͒00704-9͔mentioning

confidence: 99%

Uniparabolic mirror grading for vertical cavity surface emitting lasers

Lear

Schneider

1996

Applied Physics Letters

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“…While the heterojunction resistance can be reduced by increased doping, one cannot arbitrarily increase doping densities throughout the structure, because doing so also increases optical absorption. A more effective solution is the use of alloy grading at interfaces, often in conjunction with varied doping profiles such as increased doping at interfaces [13], delta doping [14], and modulation doping [15]. Initial demonstrations of interface grading used a single narrow region of intermediate alloy composition inserted between the high-and low-index layers [16].…”

Section: Distributed Bragg Reflectors (Dbr's)mentioning

confidence: 99%

Design, fabrication, and performance of infrared and visible vertical-cavity surface-emitting lasers

Chow

Choquette

Crawford

et al. 1997

IEEE J. Quantum Electron.

207

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Abstract-This paper discusses the issues involving the design and fabrication of vertical-cavity surface-emitting lasers (VCSEL's). A review of the basic experimental structures is given, with emphasis on recent developments in distributed Bragg reflectors, gain media, as well as current and optical confinement techniques. The paper describes present VCSEL performance, in particular, those involving selective oxidation and visible wavelength operation.

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“…Hence, a sophisticated design is necessary to facilitate electrical pumping, especially through p-doped DBRs where the low hole mobilities otherwise yield a prohibitively high device resistance. Several solutions like heavy doping, various types of mole fraction grading, and δ-doping of the interfaces have been developed to circumvent this problem in VCSELs [17,23,24]. Since the electron and hole mobilities as well as the conduction-band and valenceband offsets in an AlGaAs-based DBR differ significantly, different measures have to be taken for n-and p-DBRs in order to achieve acceptable device resistances.…”

Section: N-vs P-doped Dbr and Contact Geometrymentioning

confidence: 99%

On the design of electrically pumped vertical-external-cavity surface-emitting lasers

et al. 2008

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Vertical-external-cavity surface-emitting lasers (VECSELs) yield an excellent beam quality in conjunction with a scalable output power. This paper presents a detailed numerical analysis of electrically pumped VECSEL (EP-VECSEL) structures. Electrical pumping is a key element for compact laser devices. We consider the optical loss, current confinement, and device resistance. The main focus of our investigation is on the achievement of an adequate radial carrier distribution for fundamental transverse mode operation. It will be shown that a trade off between the conflicting optical and electrical optimization has to be found and we derive an optimized design resulting in guidelines for the design of EP-VECSELs which are compatible with passive mode locking. Vertical-external-cavity surface-emitting lasers (VECSELs) [1] are of high scientific and industrial interest due to their large fundamental transverse mode output power, scaling with the device radius, the near diffraction limited output beam, and the suitability for intracavity frequency conversion [2] and passive mode locking [3,4]. Passive mode locking of an optically pumped VECSEL has been demonstrated with a semiconductor saturable absorber mirror (SESAM) [5] in a folded external cavity. After the first passively mode locked VECSEL was demonstrated in the year 2000 [6], the milestone of nearly 1 W average output power was achieved in 2002 with improved thermal management [7]. The pulses in the early experiments were often strongly chirped, but mode-locking dynamics in VECSELs revealed that a soliton-like pulse-shaping mechanism in the positive-dispersion regime can help to generate short pulses with low chirp. With the aid of intracavity dispersion control, it then became possible to obtain nearly transform limited picosecond pulses with record high output powers of 2.1 W at 4 GHz [4] and 1.4 W at 10 GHz [8]. The pulse width could be u Fax: +41-44-633-10-59, E-mail: keller@phys.ethz.ch significantly shortened to the sub-500-fs regime using faster SESAMs based on the ac Stark effect [9]. The vertical integration of the absorber into one monolithic structure with the gain quantum wells (QWs) is an important step towards higher pulse repetition rates with decreased cavity size and wafer-scale integration. This has been achieved for the first time and is referred to as the mode-locked integrated-externalcavity surface-emitting laser (MIXSEL) [10]. So far, all these devices have been optically pumped, which involves a more complex optical setup. Thus, an important step towards waferscale fabrication of compact ultrafast VECSELs is the design of electrically pumped VECSEL (EP-VECSEL) structures. This is challenging because of optical losses and Joule heating in the doped layers. Nevertheless, continuous-wave (cw) EP-VECSELs have been demonstrated [11,12] and output powers of up to 900 mW have been obtained with a 150-µm device diameter in multimode operation [13]. Also, mode locking with down to 15-ps FWHM pulse width [14] and a wafer-scale EP-VECSEL w...

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Band-gap engineered digital alloy interfaces for lower resistance vertical-cavity surface-emitting lasers

Cited by 98 publications

References 8 publications

Uniparabolic mirror grading for vertical cavity surface emitting lasers

Uniparabolic mirror grading for vertical cavity surface emitting lasers

Design, fabrication, and performance of infrared and visible vertical-cavity surface-emitting lasers

On the design of electrically pumped vertical-external-cavity surface-emitting lasers

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