Design, fabrication, and performance of infrared and visible vertical-cavity surface-emitting lasers

Chow, Weng W.; Choquette, Kent D.; Crawford, Mary H.; Lear, K.L.; Hadley, G. Ronald

doi:10.1109/3.631287

Cited by 207 publications

(79 citation statements)

References 101 publications

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“…High quality VCSELs can be realized using the GaAs/ ͑AlGa͒As material system where the excellent matching of the materials' lattice constants, the high refractive index contrast, and the mature growth technology offer high quality Bragg mirrors. 2 However, emitters at telecommunication wavelengths today are often InP-based ͑InGa͒͑AsP͒ structures, which cannot be grown on GaAs due to the high lattice mismatch. Possible GaAs-based alternatives include the dilute nitrides, 3 InAs/ GaAs quantum dots 4 and, as is discussed here, Ga͑AsSb͒ quantum wells where room temperature VCSEL operation was already demonstrated.…”

Section: Introductionmentioning

confidence: 99%

Microscopic electroabsorption line shape analysis for Ga(AsSb)∕GaAs heterostructures

Bückers

Blume

Thränhardt

et al. 2007

Journal of Applied Physics

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A series of Ga͑AsSb͒ / GaAs/ ͑AlGa͒As samples with varying GaAs spacer width are studied by electric-field modulated absorption ͑EA͒ and reflectance spectroscopy and modeled using a microscopic theory. The analysis of the Franz-Keldysh oscillations of GaAs capping layer and of the quantum-confined Stark shift of the lowest quantum well ͑QW͒ transitions shows the strong inhomogeneity of the built-in electric field indicating that the field modulation due to an external bias voltage differs significantly for the various regions of the structures. The calculations demonstrate that the line shape of the EA spectra of these samples is extremely sensitive to the value of the small conduction band offset between GaAs and Ga͑AsSb͒ as well as to the magnitude of the internal electric field changes caused by the external voltage modulation in the QW region. The EA spectra of the entire series of samples are modeled by the microscopic theory. The good agreement between experiment and theory allows us to extract the strength of the modulation of the built-in electric field in the QW region and to show that the band alignment between GaAs and Ga͑AsSb͒ is of type II with a conduction band offset of approximately 40 meV.

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Section: Introductionmentioning

confidence: 99%

Microscopic electroabsorption line shape analysis for Ga(AsSb)∕GaAs heterostructures

Bückers

Blume

Thränhardt

et al. 2007

Journal of Applied Physics

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“…But there is also one new feature which has not been included in the previous model because of its negligible impact on properties of the above VCSELs and which has happened to be extremely important in the GaInP/AlGaInP one. In the AlGaInP compounds, the crossover of the direct and indirect band gaps occurs at 300 K for the (Al 0.58 Ga 0.42 ) 0.5 In 0.5 P material [11], which limits shorter-wavelength operation to about 555-570 nm and band-gap energies available for barrier and cladding materials [10]. Even for somewhat longer wavelengths, the higher active-region temperatures may lead to the considerable electron leakage (Fig.…”

Section: The Modelmentioning

confidence: 99%

“…There are three important features of the GaInP/ AlGaInP VCSELs which makes their high-temperature CW lasing operation more troublesome than in the case of standard GaAs/AlGaAs ones [10], smaller confining potential (shallower QWs), which means that the over-barrier carrier leakage will be greater, larger electron and heavyhole effective masses, which contributes to higher threshold currents, and too wide band-gaps of some structure layers, which may lead to a band-to-band absorption. Besides, higher carrier effective masses reduce efficiency of their injection into distant QWs, which limits their available numbers.…”

Section: The Modelmentioning

confidence: 99%

Analysis of anticipated performance of 650-nm GaInP/AlGaInP quantum-well GaAs-based VCSELs at elevated temperatures

Piskorski

Sarzała

Nakwaski

2008

Opto-Electronics Review

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The possibility of application of the 650-nm oxide-confined GaInP/AlGaInP quantum-well vertical-cavity surface-emitting diode lasers (VCSELs) at elevated temperatures as sources of the carrier 650-nm wave in the fibre optical communication using POFs has been investigated with the aid of the comprehensive self-consistent model. An increase in the VCSEL threshold current at higher temperatures has been found to be mostly associated with both the carrier leakage from the valley of the Ga0.43In0.57P quantum-well material to the X-valley of the (Al0.67Ga0.33)0.52In0.48P barriers and the band-to-band absorption within the Ga0.52In0.48P layer of the band-gap comparable with the energy of emitted radiation. Nevertheless, the AlGaInP VCSELs exhibit encouraging thermal behaviour with the characteristic temperature T0 equal to as much as 134 K for the active-region temperatures up to 357 K. For the 5-μm devices, the maximal achievable output has been determined to decrease from a quite high value of 1.0 mW for 293 K to 0.6 mW for 320 K and to still high 0.33 mW for 340 K. However, an efficient operation of the above VCSEL at elevated temperatures requires still some structure modifications leading to a reduction of both the above effects, the electron leakage from the valley and the band-to-band absorption within GaInP layers.

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“…45 In the future, however, they could become the dominant type of laser diodes. 56 Recently, it has been reported that quantum dot semiconductor lasers show enhanced radiation hardness as compared with edge-emitting quantum well lasers. [57][58][59] Because this technology is very new, 60 little information is available.…”

Section: Improving the Radiation Hardness Of Laser Diodesmentioning

confidence: 99%

Effects of radiation on laser diodes.

Phifer

2004

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The effects of ionizing and neutron radiation on the characteristics and performance of laser diodes are reviewed, and the formation mechanisms for nonradiative recombination centers, the primary type of radiation damage in laser diodes, are discussed. Additional topics include the detrimental effects of aluminum in the active (lasing) volume, the transient effects of high-doserate pulses of ionizing radiation, and a summary of ways to improve the radiation hardness of laser diodes. Radiation effects on laser diodes emitting in the wavelength region around 808 nm are emphasized.3

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Design, fabrication, and performance of infrared and visible vertical-cavity surface-emitting lasers

Cited by 207 publications

References 101 publications

Microscopic electroabsorption line shape analysis for Ga(AsSb)∕GaAs heterostructures

Microscopic electroabsorption line shape analysis for Ga(AsSb)∕GaAs heterostructures

Analysis of anticipated performance of 650-nm GaInP/AlGaInP quantum-well GaAs-based VCSELs at elevated temperatures

Effects of radiation on laser diodes.

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