Band Gap Engineering of Poly(<i>p</i>-phenyleneethynylene)s:  Cross-Conjugated PPE−PPV Hybrids

Wilson, James N.; Windscheif, Paul M.; Evans, Úna; Myrick, Michael L.; Bunz, Uwe H. F.

doi:10.1021/ma025616i

Cited by 80 publications

(46 citation statements)

References 19 publications

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“…1(b). 13 The electrical measurements under illumination also clearly indicate a strong dependence on overall incident light intensity for the BAS-PPE PFETs. A commercially available polyimide (HD Micro-Systems) was used as the gate dielectric.…”

Section: Department Of Electrical and Computer Engineering The Ohio mentioning

confidence: 84%

“…1-7 Shortly after the discovery of polymer light emitting diodes, the light detecting properties of polymer diodes were reported. 13,14 However, PPEs show high thermal, oxidative and photostability which makes them attractive for solid state devices. 12 As the dehydrogenated congener of polyphenylenevinylene (PPV), polyphenylene-ethynylene (PPE) did not receive as much attention in the early boost of semiconductor polymer research due to its low highest occupied molecular orbital (HOMO) level.…”

Section: Department Of Electrical and Computer Engineering The Ohio mentioning

confidence: 99%

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Photoresponsivity of polymer thin-film transistors based on polyphenyleneethynylene derivative with improved hole injection

Xu¹,

Berger²,

Wilson³

et al. 2004

Applied Physics Letters

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The photoresponse of polymer field-effect transistors (PFETs) based on the 2,5-bis(dibutylaminostyryl)-1,4-phenylene-b-alkyne-b-1,4-bis(2-ethylhexyl)benzene terpolymer (BAS-PPE) is investigated. BAS-PPE is a photoluminescent conducting polymer with a band gap of 2.25eV. The BAS-PPE PFETs were fabricated using an open coplanar configuration and light is illuminated onto the top side of the PFETs with no shadowing present. A sweep of VDS demonstrates that IDS saturation is suppressed during illumination, which suggests that pinch-off cannot be reached since the injected photogenerated carriers continue unabated. Also, with incident light, the channel cannot be turned off, even at high positive gate biases, due to the accumulation of photogenerated carriers. A sweep of VDS shows that BAS-PPE can act as a p-type polymer and favors hole injection and transport. A sweep of VGS shows an increase in IDS with different light intensities. The Ilight∕Idark ratio reaches as high as about 6000 at an incident light intensity of 4μW and a photoresponsivity of 5mA∕W is calculated.

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Section: Department Of Electrical and Computer Engineering The Ohio mentioning

confidence: 84%

Section: Department Of Electrical and Computer Engineering The Ohio mentioning

confidence: 99%

Photoresponsivity of polymer thin-film transistors based on polyphenyleneethynylene derivative with improved hole injection

Xu¹,

Berger²,

Wilson³

et al. 2004

Applied Physics Letters

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“…It was shown that the structural modification of OPEs, especially the substitution of electron withdrawing groups CF 3 and N, could provide an efficient blue light emitter. In earlier studies [9][10][11][12][13], it was reported that the spectral properties (absorption and emission) of oligo-and poly ( p-arylene ethylene)s (OAEs and PAEs) depend on the structure. The structural modification by means of introducing different electron donating and withdrawing groups affect the molecular orbitals of the system, which cause modification to the molecular electronic properties.…”

Section: Introductionmentioning

confidence: 99%

Absorption and emission properties of phenylene ethynylene oligomers: effect of substitution and π-conjugation length

2009

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The optical properties of a series of -conjugated phenylene-ethynylene oligomers (OPEs) have been studied by advanced quantum chemical methods. The ground state and lowest singlet excited state geometries of unsubstituted and different electron donor and acceptor groups substituted OPEs are optimized by density functional theory and configuration interaction singles methods. The absorption and emission spectra of unsubstituted and substituted OPEs have been calculated using the time-dependent density functional theory (TDDFT) method. The results of theoretical calculations are in good agreement with the available experimental results. It has been found that the substitution of electron donating and withdrawing groups in the phenyl ring and conjugation length of the OPEs has significantly affect both the absorption and emission spectra

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“…The starting materials 1 [23], 3 [31], 4 [31], 6 [32], 7 [33,34], and 8 [35,36] were prepared according to the literature procedures. Column chromatography was conducted with silica gel 60 (200e300 mesh).…”

Section: Materials and Instrumentsmentioning

confidence: 99%

Heavy atom enhanced generation of singlet oxygen in novel indenofluorene-based two-photon absorbing chromophores for photodynamic therapy

Tang

et al. 2015

Dyes and Pigments

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Band Gap Engineering of Poly(p-phenyleneethynylene)s: Cross-Conjugated PPE−PPV Hybrids

Cited by 80 publications

References 19 publications

Photoresponsivity of polymer thin-film transistors based on polyphenyleneethynylene derivative with improved hole injection

Photoresponsivity of polymer thin-film transistors based on polyphenyleneethynylene derivative with improved hole injection

Absorption and emission properties of phenylene ethynylene oligomers: effect of substitution and π-conjugation length

Heavy atom enhanced generation of singlet oxygen in novel indenofluorene-based two-photon absorbing chromophores for photodynamic therapy

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