Band-gap narrowing in novel III-V semiconductors

Abstract

A predictive model for band-gap narrowing has been applied to several III-V semiconductors. Band-gap narrowing is expressed as ΔEg =AN1/3+BN1/4+CN1/2 ; values for A, B, and C are predicted for these materials. The commonly used N1/3 relation is shown to be valid for the p-type materials considered, but not for n-type materials.

Structural, optical, and electrical properties of indium-doped cadmium oxide films prepared by pulsed filtered cathodic arc deposition

“…The three terms in equation (6) represent the exchange energy of the majority carriers, the correlation energy, and the impurity interaction energy, respectively. Equation (6) has been demonstrated to be valid for AZO, ITO and other IV, III-V, and II-VI semiconductors [14,18,19,42]. …”

“…Based on Jain's model, in a heavily doped semiconductor, the bandgap renormalization can be described by [14,42] [21,22,37], the relative dielectric constant is 21.9 [43], and the values of Λ and N b are 1 [42]. The three terms in equation (6) represent the exchange energy of the majority carriers, the correlation energy, and the impurity interaction energy, respectively.…”

“…Narrowing of the fundamental gap is the result of many-body effects and is also known as bandgap renormalization [17,18]. Good agreement between theory and experiment for the bandgap shift of heavily doped group IV, III-V, and II-VI semiconductors has been demonstrated [14,18,19]. For pure CdO films, the bandgap shift has been extensively studied using the Burstein-Moss (BM) theory while accounting for the many-body effects [20,21].…”

“…In heavily doped n-type semiconductors, the shift is due to the competitive effects of the Burstein-Moss (BM) band filling and the fundamental bandgap narrowing (BGN) [14][15][16]. Narrowing of the fundamental gap is the result of many-body effects and is also known as bandgap renormalization [17,18].…”

Dopant-induced band filling and bandgap renormalization in CdO : In films

“…According to the random perturbation theory by Berggren and Sernelius (BS model) [11], the down-shift of the conduction band due to the electron-electron interaction is (SI units): It should be mentioned that another useful expression called the Jain model could also be utilized to estimate the bandgap renormalization in CdO films [25]. In fact, the Jain model, which has been demonstrated to be valid for AZO, ITO and other IV, III-V, and II-VI semiconductors [26][27][28], has a similar physical meaning as the BS model but it is less rigorous due to its simplified derivation. In this study, compared with the BS model, the Jain model gives a 0.04~0.06 eV larger result depending on the carrier concentration but exhibits a very similar trend.…”