“…This approach has being used to model many materials intefaces, including AlAs/GaAs, AlP/GaP, Si/GaP, Ge/GaAs, Ge/AlAs, Ge/ZnSe, ZnSe/GaAs, 191 ZnO/Cu 2 O, 225 InN/GaN, 226 CdTe/CdS, CdS/ZnS, InP/GaP, 211 and AlN/GaN. 227 191 They found that the position of the band edges critically depends on the method used, with accuracy improving with the accuracy of the calculated band-gaps, however, the interface dipole is well described even with semi-local density functionals.…”