Band offsets and transport mechanisms of hydrogenated nanocrystalline silicon/crystalline silicon heterojunction diode: Key properties for device applications

Abstract

We have studied the electrical properties of hydrogenated nanocrystalline silicon/crystalline silicon heterojunction diode, focusing on the band offsets and electron transport mechanisms. Capacitance-voltage ͑C-V͒ analysis reveals that the band discontinuity mainly exists on the valence-band side, and an interface charge density on the order of 10 11 cm −2 is estimated via the numerical C-V matching technique. Temperature-and bias-dependent transport mechanisms have been clarified by dark current-voltage-temperature measurements, and the extracted parameters indicate a transition from nontunneling to tunneling dominant transport from 350 to 20 K.

Uniformity and bandgap engineering in hydrogenated nanocrystalline silicon thin films by phosphorus doping for solar cell application

“…1 Extensive optical and electrical investigations of nc-Si thin films have been carried out. [4][5][6][7][8][9] Strong optical absorption and high photocurrent are found in nc-Si films and attributed to the enhancement of the optical absorption cross section and good carrier conductivity in the nanometer grains. 10 There are numbers of attempts to realize high efficiency and good stability single-junction 11,12 and tandem 1,13,14 third generation nc-Si thin film solar cells.…”