Band offsets, dielectric dispersion and some applications of CdSe/GeO2 heterojunctions

Yb/Se/WO3/Yb Thin Film Transistors as Rectifiers, N‐Channel Metal Oxide Semiconductor Capacitors, Laser Sensors, and Microwave Bandstop Filters

“…Carbon is selected because it guarantees strong bonding with oxide materials. [ 22 ] Besides, the work function () of carbon being 5.10 eV [ 23 ] is larger than that of Se [ 4 ] and equal to that of WO 3 ( 5.10 eV [ 5 ] ), indicating the ohmic nature of contact. The measured dark and He–Ne laser ( nm) illuminated current–voltage characteristic curves are shown in Figure 6.…”

Design and characterization of MoO3/In2Se3heterojunctions as terahertz/gigahertz band filters suitable for visible light communications and 3G/4G technologies

“…Hence, formation of MoO 3 /In 2 Se 3 is more effective as it forms larger bands offsets. ph ph0 [28,29], reveal power exponent ( h ) and pre-exponential (I pho ) values of 0.62 and 0.58 and 29.93 nA and 68.16 nA, for In 2 Se 3 and MoO 3 /In 2 Se 3 films, respectively. In general, the power exponent provides information about the recombination mechanism in the photosensitive devices.…”

“…In general, the power exponent provides information about the recombination mechanism in the photosensitive devices. Namely, when monomolecular recombination is dominant (recombination in empty centers in the bulk of the films) the -I F ph relation is linear and h = 1.0 [28,29]. While sublinear recombination presented by h = 0.50 indicates that the Fermi level is balancing the trap states.…”

“…While sublinear recombination presented by h = 0.50 indicates that the Fermi level is balancing the trap states. In this case, density of charge carriers filling trap states that localized below Fermi level is less than those captured by trap states above Fermi level [28][29][30]. Values of h between 0.50 and 1.0 is then assigned to the existence of continuous trap distribution in which the free carrier density is less than the density of trap charge carriers and less than empty recombination centers [28][29][30].…”

“…In this case, density of charge carriers filling trap states that localized below Fermi level is less than those captured by trap states above Fermi level [28][29][30]. Values of h between 0.50 and 1.0 is then assigned to the existence of continuous trap distribution in which the free carrier density is less than the density of trap charge carriers and less than empty recombination centers [28][29][30]. In relation to the optical analyses, we have shown that the tails state widen (E U ) when In 2 Se 3 is coated onto MoO 3 .…”