Band parameters for III–V compound semiconductors and their alloys

Abstract

, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other.

Cathodoluminescence study of micro-crack-induced stress relief for AlN films on Si(111)

“…For an in-plane biaxial tensile stress (s xx 5 s yy 5 t b , s zz 5 0), the strain components are given by e xx 5 e yy 5 (C 11 1 C 12 -2C 13 2 /C 33 ) À1 t b and e zz 5 (2C 13 / C 33 )e xx , 25 where the elastic constants are given by Wright as C 11 = 3960 kbar, C 12 5 1370 kbar, C 13 5 1080 kbar, and C 33 5 3730 kbar. 28 t b represents the magnitude of the biaxial stress. Using Eq.…”

Hole spin relaxation in InAs/GaAs quantum dot molecules

“…The confining potential V QD is zero inside the QDs and V 0 outside, where V 0 = −0.33 eV is the valence band offset between InAs and GaAs. [39] Finally, we take κ = 4/3 for the hole g factor as suggested in [40]. We investigate the dependence of the hole spin lifetime on the external electric field F z .…”

Magnetic field implementation in multibandk⋅pHamiltonians of holes in semiconductor heterostructures

“…The QDs have radius R = 15 nm and height H = 2 nm, with an interdot barrier of thickness S = 2.8 nm. InGaAs Luttinger parameters are used for the masses, (γ 1 = 11.01, γ 2 = 4.18, and γ 3 = 4.84), 38 and a valence band offset of 0.2 eV is taken at the interfaces. In bulk, the κ constant takes a value of 7.68 (for pure InAs).…”