Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys

Fischetti, Massimo V.; Laux, S.E.

doi:10.1063/1.363052

Cited by 1,441 publications

(926 citation statements)

References 95 publications

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“…This type of behaviour is also the main attraction for applications of strained Si, Ge, and SiGe for high speed electronics. 49 Additionally, we find that, at the E 02 transition, the strength of the optical transitions is progressively enhanced with increased level of Sn incorporation. In comparison, the intensity of the 2:1 Â 10 16 ion cm À2 sample increases at least 2:5 times as compared to the 1:3 Â10 16 ion cm À2 sample.…”

Section: Discussionmentioning

confidence: 73%

Synthesis of Ge1−xSnx alloys by ion implantation and pulsed laser melting: Towards a group IV direct bandgap material

Tran

Pastor

Gandhi

et al. 2016

Journal of Applied Physics

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The germanium-tin (Ge1−xSnx) material system is expected to be a direct bandgap group IV semiconductor at a Sn content of 6.5−11 at. %. Such Sn concentrations can be realized by non-equilibrium deposition techniques such as molecular beam epitaxy or chemical vapour deposition. In this report, the combination of ion implantation and pulsed laser melting is demonstrated to be an alternative promising method to produce a highly Sn concentrated alloy with a good crystal quality. The structural properties of the alloys such as soluble Sn concentration, strain distribution, and crystal quality have been characterized by Rutherford backscattering spectrometry, Raman spectroscopy, x ray diffraction, and transmission electron microscopy. It is shown that it is possible to produce a high quality alloy with up to 6.2 at. %Sn. The optical properties and electronic band structure have been studied by spectroscopic ellipsometry. The introduction of substitutional Sn into Ge is shown to either induce a splitting between light and heavy hole subbands or lower the conduction band at the Γ valley. Limitations and possible solutions to introducing higher Sn content into Ge that is sufficient for a direct bandgap transition are also discussed.

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Section: Discussionmentioning

confidence: 73%

Synthesis of Ge1−xSnx alloys by ion implantation and pulsed laser melting: Towards a group IV direct bandgap material

Tran

Pastor

Gandhi

et al. 2016

Journal of Applied Physics

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“…44,89 Other material parameters read c l = 9150 m/s (for LA phonons), c t = 5000 m/s (for TA phonons), ρ = 2330 kg/m 3 , and ε = 11.9ε 0 . 90 The choice of deformation potential constants is not unique, 83,84,91 and we use d = 5 eV and u = 9 eV according to Ref. 90.…”

Section: Modelmentioning

confidence: 99%

Theory of spin relaxation in two-electron laterally coupled Si/SiGe quantum dots

2012

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Highly accurate numerical results of phonon-induced two-electron spin relaxation in silicon double quantum dots are presented. The relaxation, enabled by spin-orbit coupling and the nuclei of 29 Si (natural or purified abundance), is investigated for experimentally relevant parameters, the interdot coupling, the magnetic field magnitude and orientation, and the detuning. We calculate relaxation rates for zero and finite temperatures (100 mK), concluding that our findings for zero temperature remain qualitatively valid also for 100 mK. We confirm the same anisotropic switch of the axis of prolonged spin lifetime with varying detuning as recently predicted in GaAs. Conditions for possibly hyperfine-dominated relaxation are much more stringent in Si than in GaAs. For experimentally relevant regimes, the spin-orbit coupling, although weak, is the dominant contribution, yielding anisotropic relaxation rates of at least two orders of magnitude lower than in GaAs.

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“…Note that the optical coupling constant is, in analogy to Refs. [7] and [6], smaller than in the corresponding model with elastic acoustic phonons [I, 21. Figures 3 and 4 demonstrate that the inelastic model with the new values for the coupling constants leads to a similar good agreement with the experimental velocity-field characteristics [4, 3, 101 as the elastic model [l].…”

Section: Resultsmentioning

confidence: 99%

Simplified Inelastic Acoustic—Phonon Hole Scattering Model for Silicon

Bufler¹,

Schenk²,

Fichtner³

2001

Simulation of Semiconductor Processes and Devices 2001

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A simplified model for inelastic acoustic phonon scattering of holes in silicon is developed. It consists in approximating both the acoustic phonon energy and the square of the phonon wave vector by lattice-temperature dependent constants. The resulting scattering rate depends only on energy and thus facilitates the search of after-scattering-states during full-band Monte Carlo simulation. The simulation results for the velocity-field characteristics accurately agree with the experimental data at different lattice temperatures, while the population of hot-hole states is significantly enhanced compared to the elastic equipartition approximation. The value of the energy relaxation time to be used in hydrodynamic device simulations is roughly 0.1 ps.

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Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys

Cited by 1,441 publications

References 95 publications

Synthesis of Ge1−xSnx alloys by ion implantation and pulsed laser melting: Towards a group IV direct bandgap material

Synthesis of Ge1−xSnx alloys by ion implantation and pulsed laser melting: Towards a group IV direct bandgap material

Theory of spin relaxation in two-electron laterally coupled Si/SiGe quantum dots

Simplified Inelastic Acoustic—Phonon Hole Scattering Model for Silicon

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