Band structures and spatial carrier confinement in GaAs/GaP core-shell nanowires: Core/shell composition and size effects

Yang, Xiaodong; Shu, Haibo; Chen, Xiaoshuang

doi:10.1016/j.jallcom.2016.05.007

Cited by 9 publications

(3 citation statements)

References 41 publications

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“…The ionization energy of NWs was found to increase with the reduction of size due to the quantum confinement effect, resulting in lower free carrier concentration. Such a situation can be improved by introducing surface passivation layer on NW surface. , For instance, high charge carrier mobility and concentration in GaAs NWs can be achieved by surface coating with optimized AlGaAs shells . The second factor is the so-called self-purification effect. , The impurity atoms prefer to be segregated to surfaces/interfaces of semiconductor nanomaterials in the doping process, in particular for in-situ doping.…”

Section: Introductionmentioning

confidence: 99%

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Impact of Surface Point Defects on Electronic Properties and p-Type Doping of GaAs Nanowires

Shu

Yang²,

Liang³

et al. 2016

J. Phys. Chem. C

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Gallium arsenide (GaAs) nanowires possess a great potential as a fundamental building block for the next-generation electronic and optoelectronic devices, but their applications are limited by the p-type doping. Improving the p-type doping efficiency of GaAs nanowires depends on understanding the doping limits and developing effective methods to reactive p-type dopants. Here the stability of various surface point defects and their role in electronic structure and p-type doping of GaAs nanowires are studied by using first-principles calculation within density functional theory. Our results demonstrate that As antisite (AsGa) is a highly stable surface point defect under As-rich condition irrespective of bare and H-passivated GaAs nanowires. The formed AsGa defects bring deep donor-type levels into the band gap, which is responsible for the deactivation of p-type dopants in GaAs nanowires. To suppress the impact of AsGa defects on the p-type doping of GaAs nanowires, we propose two feasible methods by reducing As chemical potential (or As partial pressure) and passivating with appropriate surface species (e.g., NO2), respectively. This work provides a new insight into the origin of p-type doping limits and the guidance for the realization of highly efficient p-type doping in III–V semiconductor nanowires.

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Section: Introductionmentioning

confidence: 99%

“…Such a situation can be improved by introducing surface passivation layer on NW surface. 25,26 For instance, high charge carrier mobility and concentration in GaAs NWs can be achieved by surface coating with optimized AlGaAs shells. 25 The second factor is the so-called self-purification effect.…”

Section: Introductionmentioning

confidence: 99%

Impact of Surface Point Defects on Electronic Properties and p-Type Doping of GaAs Nanowires

Shu

Yang²,

Liang³

et al. 2016

J. Phys. Chem. C

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“…Transition from elastic to plastic strain release in core−shell nanowires revealed by in-plane x-ray diffraction Introduction Compared to planar heteroepitaxy, the formation of axial or radial heterostructures in the form of nanowires has opened up new horizons for the design of heterostructures in a more efficient and less costly way [1][2][3][4][5]. One of the most beneficial qualities of core-shell nanowires is surface passivation of the core by the surrounding shell which can be utilized to enhance the efficiency of photo-emission because it reduces non-radiative surface recombination [6,7] and thereby enhances the opto-electronic properties of the device [8][9][10].…”

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confidence: 99%

Transition from elastic to plastic strain release in core−shell nanowires revealed by in-plane x-ray diffraction

et al. 2021

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We investigate the strain evolution and relaxation process as function of increasing lattice mismatch between the GaAs core and surrounding In x Ga 1−x As shell in core-shell nanowire heterostructures grown on Si(111) substrates. The dimensions of the core and shell are kept constant whereas the indium concentration inside the shell is varied. Measuring the 224 and 220 in-plane Bragg reflections normal to the nanowire side edges and side facets, we observe a transition from elastic to plastic strain release for a shell indium content x>0.5. Above the onset of plastic strain relaxation, indium rich mounds and an indium poor coherent shell grow simultaneously around the GaAs core. Mound formation was observed for indium contents x=0.5 and 0.6 by scanning electron microscopy. Considering both the measured radial reflections and the axial 111 Bragg reflection, the 3D strain variation was extracted separately for the core and the In x Ga 1−x As shell.

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Adjusting shell composition and content of Co-based bimetal core–shell microspheres toward the broadband microwave absorption

et al. 2021

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Band structures and spatial carrier confinement in GaAs/GaP core-shell nanowires: Core/shell composition and size effects

Cited by 9 publications

References 41 publications

Impact of Surface Point Defects on Electronic Properties and p-Type Doping of GaAs Nanowires

Impact of Surface Point Defects on Electronic Properties and p-Type Doping of GaAs Nanowires

Transition from elastic to plastic strain release in core−shell nanowires revealed by in-plane x-ray diffraction

Adjusting shell composition and content of Co-based bimetal core–shell microspheres toward the broadband microwave absorption

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