Bandfilling and photon-assisted tunneling in a quantum-well transistor laser

Abstract

Articles you may be interested inStochastic base doping and quantum-well enhancement of recombination in an n-p-n light-emitting transistor or transistor laser Appl. Phys. Lett. 96, 263505 (2010); 10.1063/1.3458708 Photon-assisted breakdown, negative resistance, and switching in a quantum-well transistor laser Appl. Phys. Lett. 90, 152109 (2007); 10.1063/1.2721364Observations of near-zero linewidth enhancement factor in a quantum-well coupled quantum-dot laser

Improvement in the current-gain of a 1.3-µm npn-AlGaInAs/InP transistor laser using a thin p-GaInAsP base layer

“…On the other hand, for a bias current above the threshold, the recombination speed is high owing to the stimulated emission, resulting in the reduction in the current gain. This effect is unique behavior of a TL, 20,21) and we observed it for the first time in the 1.3-µm npn-AlGaInAs=InP TL.…”

Voltage and Current Modulation at 20 Gb/s of a Transistor Laser at Room Temperature

“…The phenomenon of photon-assisted tunneling has been discussed previously [16], [17] and arises due to the band bending in the BC depletion region. As illustrated in Fig.…”

“…The transistor laser (TL) has been demonstrated with: roomtemperature continuous wave operation [14], fast spontaneous recombination lifetime (< 25ps) [15], bandfilling and voltage modulation via intracavity photon-assisted tunneling [16], [17], signal mixing via a tunnel junction [18], resonancefree high frequency operation [19], collector feedback control of laser power [20], and simultaneous 20 Gb/s electrical and optical transmission at low temperature [21]. Recently, low temperature operation of a vertical-cavity surface-emitting transistor laser (VCTL) has also been demonstrated [22].…”

Relative intensity noise of a quantum well transistor laser

“…The kinks are due to the carrier lifetime reduction and the differential gain enhancement with higher density of states operation as the laser shifts from the QW ground state (k 0 ) to the first excited state (k 1 ). 15 Figure 3 displays the measured (i) optical microwave response and (ii) RIN of an edge-emitting TL with laser cavity length L ¼ 300 lm at 0 C. The bias setting parameters are V CE ¼ 1.5 V, I B ¼ 30, 40, and 70 mA. To measure the electrical and optical microwave response of the TL, a threeport parametric network analyzer (PNA) is employed and carefully calibrated.…”