A single quantum well transistor laser (cavity length L = 300 μm) has been designed and fabricated that operates with threshold ITH = 18 mA at 15 °C and 14 mA at 0 °C. Due to the “fast” base recombination lifetime (τB < 29 ps), the transistor laser demonstrates reduced photon-carrier resonance amplitude (<4 dB) over its entire bias range and a modulation bandwidth f-3dB = 9.8 GHz at 15 °C for IB/ITH = 3.3 and 17 GHz at 0 °C for IB/ITH = 6.4. Under the same bias conditions, simultaneous electrical and optical “open-eye” signal operations are demonstrated at 20 and 40 Gb/s data rate modulation.

Data are presented showing open-eye 20-Gb/s transmission for a quantum-well transistor laser operating at room temperature (25°C). The fast spontaneous recombination lifetime (∼30 ps) in the base region results in a resonance-free frequency response allowing demonstration of 20-Gb/s transmission with an I/I TH = 3. It is shown that higher temperature hastens the transition to the first excited state and improves bandwidth and eye-opening at low bias levels (I/I TH = 2). In addition, room temperature 20-Gb/s transmission through voltage modulation of a transistor laser via intracavity photon-assisted tunneling in the base-collector junction is reported.

Reliability and low-frequency noise measurements of InGaAsP multiple quantum well buried-heterostructure lasers J.A quantum well transistor laser with a base cavity length L ¼ 300 lm has been designed, fabricated, and operated at threshold I TH ¼ 25 mA (0 C). As a consequence of the inherent advantage of the picosecond base recombination lifetime, the transistor laser is able to achieve nearly a quantum shot-noise limited laser relative intensity noise (RIN) with a peak amplitude of À151 dB/Hz at frequency 8.6 GHz. Compared with a diode laser (a charge storage device) at the same output power, the transistor laser (a charge flow device) has a better than 28 dB (number dependent on the laser device design) peak RIN advantage. V C 2012 American Institute of Physics.

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