Transistor laser with simultaneous electrical and optical output at 20 and 40 Gb/s data rate modulation

Tan, Fei; Bambery, Rohan; Feng, Milton; Holonyak, N.

doi:10.1063/1.3622110

Cited by 38 publications

(15 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The injected electrons that do not recombine in the base are swept into the collector region. Previously edge emitting transistor lasers have demonstrated a very fast recombination lifetime τ B ∼ 23 ps, enhancing the modulation bandwidth and permitting a resonance-free laser [18], which also should be an advantage of a surface emission VCTL.…”

Section: Surface Emission Vertical Cavity Transistor Laser Fabricmentioning

confidence: 99%

“…With quantum-wells inserted in the base of the HBT and with cavity modifications (for higher cavity Q) it is possible to make, using HBT base recombination (I B ), a quantum-well transistor laser (QWTL) [13]- [16], a three-port laser. The QWTL has demonstrated fast spontaneous recombination lifetime (<25 ps), a reduced photon-carrier resonance amplitude (a resonance-free laser), a 20 GHz signal modulation bandwidth [17], and simultaneous electrical and optical "open-eye" signal operation at 40 Gb/s data rate modulation [18].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Surface Emission Vertical Cavity Transistor Laser

Feng

Holonyak

2012

IEEE Photon. Technol. Lett.

View full text Add to dashboard Cite

We demonstrate the first surface emission vertical cavity transistor laser (VCTL) operation with an InGaP heterojunction bipolar transistor incorporating the InGaAs quantumwells in the base and vertical distributed Bragg reflectors. The transistor collector I − V characteristics show gain (β = I c / I B ) compression, β decreasing from 0.52 to 0.47, due to the base recombination shifting from spontaneous to stimulated with increasing base current (I B > I TH ). The surface emission VCTL threshold current is I TH ∼ 3 mA for a cavity of 9×6 μm 2 lateral dimensions. The laser spectra at I B = 10 mA exhibit two peaks at 975.12 and 975.22 nm with linewidth λ ∼ 0.7 Å.

show abstract

Section: Surface Emission Vertical Cavity Transistor Laser Fabricmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Surface Emission Vertical Cavity Transistor Laser

Feng

Holonyak

2012

IEEE Photon. Technol. Lett.

View full text Add to dashboard Cite

show abstract

“…These are in agreement with the values for sample A (30-40 ps) published previously. 18 It is noteworthy to observe the diminished amplitude of the resonance peak in the response of sample A (1.5 dB) as compared to sample B (4 dB). This is a direct consequence of the reduced lifetime in the base region as we have claimed previously.…”

mentioning

confidence: 92%

“…This is a direct consequence of the reduced lifetime in the base region as we have claimed previously. 4,10,18 The absence of a large resonance peak in the transistor laser's frequency response results in an improvement in signal integrity.…”

mentioning

confidence: 98%

Effect of the energy barrier in the base of the transistor laser on the recombination lifetime

Bambery

Wang

Dallesasse

et al. 2014

Applied Physics Letters

Self Cite

View full text Add to dashboard Cite

Data are presented to quantify the effect of the conduction band energy barrier (ΔEC,B) in the base region of the transistor laser on the minority carrier transport dynamics, recombination lifetime in the base region, and frequency response of the device. A greater ΔEC,B results in lower transistor current gain (β) and higher optical output power, indicating increased carrier confinement and recombination in the base. For a device with ΔEC,B = 41 meV, the measured bias-dependent optical frequency response and subsequent data fitting yield a short recombination lifetime of 30 ps in the base and a small resonance peak of 1.5 dB. A device with ΔEC,B = 82 meV exhibits a longer recombination lifetime of 70 ps and a larger resonance peak of 4 dB.

show abstract

“…Based on the monolithic integration of a heterojunction bipolar transistor (HBT) in a semiconductor laser they provide a number of unique properties as compared to conventional diode lasers [1,2]. A particularly attractive feature is the potential for increased laser modulation bandwidth due to the altered charge dynamics in the base region [3]. Given the growing demand for broadband capacity in optical communication networks this may find important applications.…”

mentioning

confidence: 99%

Room‐temperature operation of transistor vertical‐cavity surface‐emitting laser

Berggren

et al. 2013

Electron. lett.

View full text Add to dashboard Cite

We demonstrate the first room-temperature operation of a transistor vertical-cavity surface-emitting laser (T-VCSEL). Fabricated using an epitaxial regrowth process, the T-VCSEL is electrically a Pnp-type bipolar junction transistor and consists of an undoped AlGaAs/GaAs bottom DBR, an InGaAs triple-quantum-well (TQW) active layer, an Si/SiO2 dielectric top DBR, and an intracavity contacting scheme with three electrical terminals. The output power is controlled by the base current in combination with the emitter-collector voltage, showing a voltage-controlled operation mode. A low threshold base-current of 0.8 mA and an output power of 1.8 mW have been obtained at room temperature. Continuous-wave operation was performed up to 50°C .Introduction: Transistor lasers have received significant attention during recent years. Based on the monolithic integration of a heterojunction bipolar transistor (HBT) in a semiconductor laser they provide a number of unique properties as compared to conventional diode lasers [1,2]. A particularly attractive feature is the potential for increased laser modulation bandwidth due to the altered charge dynamics in the base region [3]. Given the growing demand for broadband capacity in optical communication networks this may find important applications. Single-channel data rates of 40 Gbit/s and beyond are e.g. presently considered for local area networks and interconnects. Due to the tough requirements on cost-and powerefficiency, vertical-cavity surface-emitting lasers (VCSELs) are the preferred light-sources for these applications. Whereas VCSELs have been demonstrated with 3dB-bandwidth of 28 GHz [4] and VCSELbased optical links with modulation speeds up to 55 Gbit/s [5], this is approaching fundamental limits. To reach such high and even higher modulation rates over an extended temperature range and with sufficient output power, radically new design concepts are required. Transistor-VCSELs (T-VCSELs) and their potential for high-speed modulation were evaluated numerically by Shi et al. [6], and very recently the first experimental demonstration of a T-VCSEL at low temperature was reported [7], including the voltage controlled operation of such lasers [8].In the present work, we have fabricated and investigated a GaAsbased Pnp-type 980-nm T-VCSEL. Continuous-wave operation is demonstrated up to 50°C with a room-temperature (RT) output power of 1.8 mW for a 10·10-µm 2 device, controlled by the base current in combination with the collector-emitter voltage. To the best of our knowledge, this is the first demonstration of the room-temperature operation of a T-VCSEL.

show abstract

Transistor laser with simultaneous electrical and optical output at 20 and 40 Gb/s data rate modulation

Cited by 38 publications

References 19 publications

Surface Emission Vertical Cavity Transistor Laser

Surface Emission Vertical Cavity Transistor Laser

Effect of the energy barrier in the base of the transistor laser on the recombination lifetime

Room‐temperature operation of transistor vertical‐cavity surface‐emitting laser

Contact Info

Product

Resources

About