Surface Emission Vertical Cavity Transistor Laser

Wu, Meng‐Che; Feng, Milton; Holonyak, N.

doi:10.1109/lpt.2012.2203356

Cited by 20 publications

(8 citation statements)

References 16 publications

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“…Digital Object Identifier VCSEL was reported by Wu, Feng and Holonyak in 2012 [3]. Studying the static performance of these npn-type T-VCSELs, they showed features such as gain-compression due to the onset of stimulated emission and voltage-controlled operation [4].…”

Section: Introductionmentioning

confidence: 98%

Performance Optimization of GaAs-Based Vertical-Cavity Surface-Emitting Transistor-Lasers

Reuterskiöld-Hedlund

et al. 2015

IEEE Photon. Technol. Lett.

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Abstract-We report on the optimization of pnp-type verticalcavity surface-emitting transistor-lasers based on the fusion between an AlGaAs/GaAs heterojunction bipolar transistor and an InGaAs/GaAs VCSEL using an epitaxial regrowth process. It is shown how a proper design of the base region can extend the transistor active range of operation well beyond lasing threshold, thereby resulting in typical transistor laser operational characteristics including mW-range output power, mA-range base threshold current, record-low power dissipation under laser operation, and continuous-wave operation up to at least 60°C. A pronounced breakdown in the collector current characteristics in the limit of high base current and/or emitter-collector voltage accompanied by a quenching of the optical output power is interpreted as being related to quantum well band-filling.

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Section: Introductionmentioning

confidence: 98%

Performance Optimization of GaAs-Based Vertical-Cavity Surface-Emitting Transistor-Lasers

Reuterskiöld-Hedlund

et al. 2015

IEEE Photon. Technol. Lett.

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“…Recently, low temperature operation of a vertical-cavity surface-emitting transistor laser (VCTL) has also been demonstrated [22]. Analytical modeling of the transistor laser has been discussed in [23] however, this falls short in agreeing with measured data of fabricated devices, specifically with regards to the low-bias resonance peak in the RF response.…”

Section: Introductionmentioning

confidence: 99%

Voltage and Current Modulation at 20 Gb/s of a Transistor Laser at Room Temperature

Bambery

Tan

Feng

et al. 2013

IEEE Photon. Technol. Lett.

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Data are presented showing open-eye 20-Gb/s transmission for a quantum-well transistor laser operating at room temperature (25°C). The fast spontaneous recombination lifetime (∼30 ps) in the base region results in a resonance-free frequency response allowing demonstration of 20-Gb/s transmission with an I/I TH = 3. It is shown that higher temperature hastens the transition to the first excited state and improves bandwidth and eye-opening at low bias levels (I/I TH = 2). In addition, room temperature 20-Gb/s transmission through voltage modulation of a transistor laser via intracavity photon-assisted tunneling in the base-collector junction is reported.

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“…To reach such high and even higher modulation rates over an extended temperature range and with sufficient output power, radically new design concepts are required. Transistor-VCSELs (T-VCSELs) and their potential for high-speed modulation were evaluated numerically by Shi et al [6], and very recently the first experimental demonstration of a T-VCSEL at low temperature was reported [7], including the voltage controlled operation of such lasers [8].In the present work, we have fabricated and investigated a GaAsbased Pnp-type 980-nm T-VCSEL. Continuous-wave operation is demonstrated up to 50°C with a room-temperature (RT) output power of 1.8 mW for a 10·10-µm 2 device, controlled by the base current in combination with the collector-emitter voltage.…”

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confidence: 98%

mentioning

confidence: 99%

Room‐temperature operation of transistor vertical‐cavity surface‐emitting laser

Berggren

et al. 2013

Electron. lett.

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We demonstrate the first room-temperature operation of a transistor vertical-cavity surface-emitting laser (T-VCSEL). Fabricated using an epitaxial regrowth process, the T-VCSEL is electrically a Pnp-type bipolar junction transistor and consists of an undoped AlGaAs/GaAs bottom DBR, an InGaAs triple-quantum-well (TQW) active layer, an Si/SiO2 dielectric top DBR, and an intracavity contacting scheme with three electrical terminals. The output power is controlled by the base current in combination with the emitter-collector voltage, showing a voltage-controlled operation mode. A low threshold base-current of 0.8 mA and an output power of 1.8 mW have been obtained at room temperature. Continuous-wave operation was performed up to 50°C .Introduction: Transistor lasers have received significant attention during recent years. Based on the monolithic integration of a heterojunction bipolar transistor (HBT) in a semiconductor laser they provide a number of unique properties as compared to conventional diode lasers [1,2]. A particularly attractive feature is the potential for increased laser modulation bandwidth due to the altered charge dynamics in the base region [3]. Given the growing demand for broadband capacity in optical communication networks this may find important applications. Single-channel data rates of 40 Gbit/s and beyond are e.g. presently considered for local area networks and interconnects. Due to the tough requirements on cost-and powerefficiency, vertical-cavity surface-emitting lasers (VCSELs) are the preferred light-sources for these applications. Whereas VCSELs have been demonstrated with 3dB-bandwidth of 28 GHz [4] and VCSELbased optical links with modulation speeds up to 55 Gbit/s [5], this is approaching fundamental limits. To reach such high and even higher modulation rates over an extended temperature range and with sufficient output power, radically new design concepts are required. Transistor-VCSELs (T-VCSELs) and their potential for high-speed modulation were evaluated numerically by Shi et al. [6], and very recently the first experimental demonstration of a T-VCSEL at low temperature was reported [7], including the voltage controlled operation of such lasers [8].In the present work, we have fabricated and investigated a GaAsbased Pnp-type 980-nm T-VCSEL. Continuous-wave operation is demonstrated up to 50°C with a room-temperature (RT) output power of 1.8 mW for a 10·10-µm 2 device, controlled by the base current in combination with the collector-emitter voltage. To the best of our knowledge, this is the first demonstration of the room-temperature operation of a T-VCSEL.

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Surface Emission Vertical Cavity Transistor Laser

Cited by 20 publications

References 16 publications

Performance Optimization of GaAs-Based Vertical-Cavity Surface-Emitting Transistor-Lasers

Performance Optimization of GaAs-Based Vertical-Cavity Surface-Emitting Transistor-Lasers

Voltage and Current Modulation at 20 Gb/s of a Transistor Laser at Room Temperature

Room‐temperature operation of transistor vertical‐cavity surface‐emitting laser

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