2020
DOI: 10.1039/d0tc03598j
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Bandgap and strain engineering in epitaxial rocksalt structure (Ti0.5Mg0.5)1−xAlxN(001) semiconductors

Abstract: Rocksalt-structure nitrides emerge as a promising class of semiconductors for high-temperature thermoelectric and plasmonic applications. Controlling the bandgap and strain is essential for the development of a wide variety of...

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Cited by 10 publications
(7 citation statements)
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“…N * decreases continuously to 3.2, 2.4, 2.2, 1.7, and 1.6 × 10 22 cm –3 for x = 0.12, 0.19, 0.26, 0.39, and 0.49, respectively. The last value agrees with the previously reported N * = 1.4 × 10 22 cm –3 for Ti 0.5 Mg 0.5 N . Both N and N * show a similar composition dependence with a linear decrease, as indicated by the dashed line in Figure b.…”
Section: Resultssupporting
confidence: 91%
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“…N * decreases continuously to 3.2, 2.4, 2.2, 1.7, and 1.6 × 10 22 cm –3 for x = 0.12, 0.19, 0.26, 0.39, and 0.49, respectively. The last value agrees with the previously reported N * = 1.4 × 10 22 cm –3 for Ti 0.5 Mg 0.5 N . Both N and N * show a similar composition dependence with a linear decrease, as indicated by the dashed line in Figure b.…”
Section: Resultssupporting
confidence: 91%
“…This shift in the reflection edge associated with the incorporation of Mg explains the distinct color change with increasing x that has been previously reported for Ti 1−x Mg x N layers. 12,18,19,22,23,44,53 The inset in Figure 1b summarizes the results from the reflectance measurements, showing a plot of ℏω min and ℏω e versus Mg content x. The values for ℏω min are directly obtained from the R spectra, while the ℏω e values are determined from curve fitting described below.…”
Section: ■ Results and Discussionsupporting
confidence: 87%
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“…The alloying TiN by Mg addition (Ti 1– x Mg x N) has been extensively employed to tune the optical properties and improve the coating stability and corrosion resistance as compared to TiN. , Tunable infrared plasmonic properties have also been reported for Ti 1– x Mg x N films. Increasing Mg loading in TiN can induce metal-to-semiconductor transition on Ti 0.5 Mg 0.5 N composition, adopting an ordered rocksalt-derived structure, which was further confirmed by the first-principles theoretical calculations . Further introducing Al by alloying Ti 0.5 Mg 0.5 N with AlN can improve the lattice mismatch of Ti 0.5 Mg 0.5 N with MgO substrates, tailor the strain, and therefore modulate the band gap …”
Section: Introductionmentioning
confidence: 99%