Bandgap and temperature dependence of Auger recombination in InAs/InAsSb type-II superlattices

Aytac, Yigit; Olson, B. V.; Kim, J. K.; Shaner, Eric A.; Hawkins, Samuel D.; Klem, John F.; Olesberg, J. T.; Flatté, Michael E.; Boggess, Thomas F.

doi:10.1063/1.4953386

Cited by 28 publications

(19 citation statements)

References 16 publications

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“…[53] Several studies have confirmed that Auger recombination coefficients depend on temperature. [55][56][57][58] This feature is related to electron and hole relaxations which rely on temperature. Thus, we observe that the temperature-dependence of Auger coefficients, which are associated with phonon scattering, is strong in InP/5ZnSe/ ZnS QDs.…”

Section: Temperature-dependent Photoluminescence Propertiesmentioning

confidence: 99%

Electrochemical Charging Effect on the Optical Properties of InP/ZnSe/ZnS Quantum Dots

Park

Won

Kim

et al. 2020

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fabrication of blue-emitting Cd-free QDs are still under development. [7-10] Above all, the charging of QDs is an obstacle for manufacturing QD-LEDs with good performance. [11] The simple mechanism of EL is that electrons and holes are formed by charge injection, and light is generated by the electron-hole pair recombination. Hence, it is essential to understand the charging process by mimicking EL processes. The complementary combination of spectroscopic technology and electrochemical control helps emulate EL and explain the charging process whether the charges occupy quantum states or trap states. Recently, there has been an increase in research to improve QD luminescence capabilities and charge extraction properties by performing electrochemical charging studies on QD films. [1,12,13] Li et al. [13] have shown that electron injection into the ground excitonic state of CdSe/CdS QDs leads to the bleaching of 1S 3/2 1S e transition because of 1S e state filling. Qin et al. [14] have investigated how the photoluminescence (PL) lifetime changes in CdSeS/ZnS QD under electrochemical control with blinking dynamics. Gooding et al. [15] have studied the effects of hole and electron injection on the PL of CdSe/ CdS/ZnS QDs. Many studies have revealed the effect of electron injection on the optical properties in Cd-based QDs, which leads to environmental issues. Environmentally friendly III-V semiconductors, especially InP QDs, have recently emerged as the best alternative to toxic II-VI semiconductors. [16-17] Meanwhile, the surfaces of InP core QDs are easily oxidized when they are exposed to oxygen environments. As a countermeasure, overcoating nanocrystals with wider band-gap materials has proven to be the best option to increase stability against photo-oxidation and to enhance the photoluminescence quantum yield (PL QY). [5,18,19] For example, the inorganic core can be surrounded by the shell, such as ZnSe and ZnS. [20] Möbius et al. reported that the electrical charges generated by application of a mechanical load are injected into the QDs, leading to PL quenching in InP/ZnS-based device. [17] However, the spectroelectrochemical properties were not yet reported in InP QDs to the best of our knowledge. Recently, we have reported highly luminescent InP/ZnSe/ZnS QDs synthesized with as much high efficiency as state-of-the-art Cd-based QDs. [21] In this study, we analyze the spectroelectrochemical properties depending on mid-shell thickness to identify the effect of charging on highly luminescent InP Semiconductor quantum dots (QDs) are spotlighted as a key type of emissive material for the next generation of light-emitting diodes (LEDs). This work presents the investigation of the electrochemical charging effect on the absorption and emission of the InP/ZnSe/ZnS QDs with different mid-shell thicknesses. The excitonic peak is gradually bleached during electrochemical charging, which is caused by 1S e (or 1S h) state filling when the electron (or hole) is injected into the InP core. Additional charges also lead to photo...

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Section: Temperature-dependent Photoluminescence Propertiesmentioning

confidence: 99%

Electrochemical Charging Effect on the Optical Properties of InP/ZnSe/ZnS Quantum Dots

Park

Won

Kim

et al. 2020

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“…The radiative and Auger recombination for the AL T2SL InAs/InAsSb rates were modeled as average values for the bulk InAs and InAsSb ( x Sb = 0.4). The overlap matrix element F 1 F 2 for both the InAs and InAsSb Auger recombination rate estimates was assumed to be 0.2 . The SRH capture cross‐sections σ n / σ p = 5 × 10 −15 cm 2 and the trap concentration N T = 10 13 cm −3 for both T2SL InAs/InAsSb AL and AlAsSb BL were assumed for the numerical simulation of nBn device performance.…”

Section: Nbn Detector–device Simulationmentioning

confidence: 99%

A Thermoelectrically Cooled nBn Type‐II Superlattices InAs/InAsSb/B‐AlAsSb Mid‐Wave Infrared Detector

Martyniuk

Michalczewski

Tsai

et al. 2020

Physica Status Solidi (a)

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Herein, an nBn barrier mid‐wave infrared InAs/InAsSb (xSb = 0.4) type‐II superlattice (T2SL) detector operating in the thermoelectrical (TE) cooling condition is reported. AlAsSb (Sb‐composition, xSb ≥ 0.975) is shown not to introduce an additional barrier in the valence band in the analyzed temperature range (≥200 K) reached by four‐stage TE cooling in nBn barrier architectures with a T2SL InAs/InAsSb active layer. The dark current and photocurrent produced are analyzed in relation to the barrier and contact layer doping, with the Sb composition of the barrier indicating the optimal architecture. The results of the simulation are compared with the experimental results of the HgCdTe and InAsSb nBn barrier detectors. A detectivity of ≈1010 cmHz1/2 W−1 at 200 K is reported without an immersion lens (≈1011 cmHz1/2 W−1 is reported for an immersed detector).

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“…Type II InAs/InAsSb superlattices (SLs) have emerged as a promising material system for the absorber layer of high efficiency detectors. The type-II band alignment provides remarkable band structure flexibility and the ability to tune the bandgap across the entire infrared wavelength range 1 , while suppressing non-radiative Auger recombination 2 . Conventional InAs/GaSb type-II SLs suffer with reduced minority carrier lifetimes due to the presence of Ga, which is associated with the formation of native defects 3,4 .…”

Section: Introductionmentioning

confidence: 99%

Heteroepitaxial integration of InAs/InAsSb type-II superlattice barrier photodetectors onto silicon

Carrington

Delli

Letka

et al. 2020

Infrared Sensors, Devices, and Applications X

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GaSb-based materials can be used to produce high performance photonic devices operating in the technologically important mid-infrared spectral range. Direct epitaxial growth of GaSb on silicon (Si) is an attractive method to reduce manufacturing costs and opens the possibility of new applications, such as lab-on-a-chip MIR photonic integrated circuits and monolithic integration of focal plane arrays (FPAs) with Si readout integrated circuits (ROICs). However, fundamental material dissimilarities, such as the large lattice mismatch, polar-nonpolar character of the III-V/Si interface and differences in thermal expansion coefficients lead to the formation of threading dislocations and antiphase domains, which effect the device performance. This work reports on the molecular beam epitaxial growth of high quality GaSb-based materials and devices onto Si. This was achieved using a novel growth procedure consisting of an efficient AlSb interfacial misfit array, a two-step GaSb growth temperature procedure and a series of dislocation filter superlattices, resulting in a low defect density, anti-phase domain free GaSb buffer layer on Si. A nBn barrier photodetector based on a type-II InAs/InAsSb superlattice was grown on top of the buffer layer. The device exhibited an extended 50 % cutoff wavelength at 5.40 μm at 200 K which moved to 5.9 μm at 300 K. A specific detectivity of 1.5 x10 10 Jones was measured, corresponding in an external quantum efficiency of 25.6 % at 200 K.

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Bandgap and temperature dependence of Auger recombination in InAs/InAsSb type-II superlattices

Cited by 28 publications

References 16 publications

Electrochemical Charging Effect on the Optical Properties of InP/ZnSe/ZnS Quantum Dots

Electrochemical Charging Effect on the Optical Properties of InP/ZnSe/ZnS Quantum Dots

A Thermoelectrically Cooled nBn Type‐II Superlattices InAs/InAsSb/B‐AlAsSb Mid‐Wave Infrared Detector

Heteroepitaxial integration of InAs/InAsSb type-II superlattice barrier photodetectors onto silicon

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