Heteroepitaxial integration of InAs/InAsSb type-II superlattice barrier photodetectors onto silicon

Carrington, Peter J.; Delli, Evangelia; Letka, Veronica; Bentley, M.R.; Hodgson, P.; Repiso, E.; Hayton, Jonathan; Craig, Adam; Lu, Qi; Beanland, Richard; Krier, A.; Marshall, Andrew

doi:10.1117/12.2568741

Cited by 3 publications

(6 citation statements)

References 12 publications

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“…Targeting applications in the near-infrared, telecom, and mid-infrared bands, GaAs, InP, and GaSb thin films have all been successfully grown on Si wafers without APBs. Due to the difference in lattice mismatch and growth dynamics, the TD density of GaAs/Si thin film has been reduced to 10 6 cm −2 , while that of InP/Si and GaSb/Si are in the order of 10 8 cm −2 and 10 7 cm −2 , respectively [32][33][34]. Figure 1 lists the basic parameters of III-V PDs grown on Si based on GaAs, InP, and GaSb material platforms.…”

Section: Blanket Heteroepitaxy Of Iii-v Pds On Simentioning

confidence: 99%

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Recent Progress in III–V Photodetectors Grown on Silicon

Zeng

Jin

et al. 2023

Photonics

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An efficient photodetector (PD) is a key component in silicon-based photonic integrated circuits (PICs). III–V PDs with low dark current density, large bandwidth, and wide operation wavelength range have become increasingly important for Si photonics in various applications. Monolithic integration of III–V PDs on Si by direct heteroepitaxy exhibits the lowest cost, the largest integration density, and the highest throughput. As the research of integrating III–V lasers on Si flourishes in the last decade, various types of III–V PDs on Si with different device structures and absorption materials have also been developed. While the integration of III–V lasers on Si using various technologies has been systematically reviewed, there are few reviews of integrating III–V PDs on Si. In this article, we review the most recent advances in III–V PDs directly grown on Si using two different epitaxial techniques: blanket heteroepitaxy and selective heteroepitaxy.

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Section: Blanket Heteroepitaxy Of Iii-v Pds On Simentioning

confidence: 99%

Section: Blanket Heteroepitaxy Of Iii-v Pds On Simentioning

confidence: 99%

Recent Progress in III–V Photodetectors Grown on Silicon

Zeng

Jin

et al. 2023

Photonics

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“…R d A product is the dynamic resistance‐area product that is used for barrier detectors where an applied bias is required to achieve proper responsivity. Figure compares the R d A product to “Rule 07” for barrier and nonbarrier PDs based on Ga‐free [ 163–165,238 ] and Ga‐containing [ 68,112,174,182,239 ] T2SL at HOT of 300 K in the MWIR spectral range. Generally, it can be seen that the RA performance of T2SL PDs is approaching the performance level of the current state‐of‐the‐art MCT detectors.…”

Section: Optical and Electrical Performance Of Pdsmentioning

confidence: 99%

“…Generally, it can be seen that the RA performance of T2SL PDs is approaching the performance level of the current state‐of‐the‐art MCT detectors. It is seen that the best RA product is achieved using a barrier‐based Ga‐free T2SL PD, [ 163,238 ] with a cut‐off wavelength of 5.8 μm under an applied bias of 200 mV, which slightly exceeds the MCT's “Rule 07” at 300 K.In contrast, the RA performance of nonbarriers Ga‐based T2SL [ 68,112,182 ] is lower than that of barrier detectors and it is roughly less than an order of magnitude compared to “Rule 07.”…”

Section: Optical and Electrical Performance Of Pdsmentioning

confidence: 99%

Emerging Type‐II Superlattices of InAs/InAsSb and InAs/GaSb for Mid‐Wavelength Infrared Photodetectors

Alshahrani

Kesaria

Anyebe

et al. 2021

Advanced Photonics Research

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Mid‐wavelength infrared (MWIR) photodetectors (PDs) are highly essential for environmental sensing of hazardous gases, security, defense, and medical applications. Mercury cadmium telluride (MCT) materials have been the most used detector in the MWIR range. However, it is plagued by several challenges including toxicity concerns, a high rate of Auger nonradiative recombination, a large band‐to‐band (BTB) tunneling current, nonuniformity, and the need for cryogenic cooling. Theoretically, it is predicted that type‐II superlattice (T2SL) materials can emerge as an alternative with the potential to outperform the current state‐of‐the‐art MCT PDs due to suppression of Auger recombination associated with bandgap engineering and reduced BTB tunneling current caused by the larger effective mass. Based on this theoretical prediction, it is believed that T2SL have the potential to operate at high temperatures and overcome the size, weight, and power consumption limitations of MCT. Herein, a detailed review of the fundamental material properties of T2SL PDs is provided while providing a comparison of the optical and electrical performances of Ga‐free (InAs/InAsSb) and Ga‐based (InAs/GaSb) T2SL PDs. Finally, recent advances in IR detection technologies including focal plane arrays and quantum cascade infrared photodetectors are explored.

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“…Superlattice (SL) is a periodic heterostructure of two or more alternating layers whose bandgap can be engineered by changing the thickness of the constituent layers. Type-II superlattice (T2SL) is emerging as a popular material for photodetectors (PDs), − photodiodes, − avalanche photodetectors (APDs), , light-emitting diodes (LEDs), , lasers, − and phototransistors. , Due to its advantages, such as suppressed Auger recombination, , reduced tunneling current, and the flexibility of incorporating unipolar barriers, T2SL-based devices are theoretically expected to achieve higher performance levels than MCT detectors. , …”

Section: Introductionmentioning

confidence: 99%

Effect of Interfacial Schemes on the Optical and Structural Properties of InAs/GaSb Type-II Superlattices

Alshahrani

Kesaria

Jiménez

et al. 2023

ACS Appl. Mater. Interfaces

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Incorporating an intentional strain compensating InSb interface (IF) layer in InAs/GaSb type-II superlattices (T2SLs) enhances device performance. But there is a lack of studies that correlate this approach’s optical and structural quality, so the mechanisms by which this improvement is achieved remain unclear. One critical issue in increasing the performance of InAs/GaSb T2SLs arises from the lattice mismatch between InAs and GaSb, leading to interfacial strain in the structure. Not only that but also, since each side of the InAs/GaSb heterosystem does not have common atoms, there is a possibility of atomic intermixing at the IFs. To address such issues, an intentional InSb interfacial layer is commonly introduced at the InAs-on-GaSb and GaSb-on-InAs IFs to compensate for the strain and the chemical mismatches. In this report, we investigate InAs/GaSb T2SLs with (Sample A) and without (Sample B) InSb IF layers emitting in the mid-wavelength infrared (MWIR) through photoluminescence (PL) and band structure simulations. The PL studies indicate that the maximum PL intensity of Sample A is 1.6 times stronger than that of Sample B. This could be attributed to the effect of migration-enhanced epitaxy (MEE) growth mode. Band structure simulations understand the impact of atomic intermixing and segregation at T2SL IFs on the bandgap energy and PL intensity. It is observed that atomic intermixing at the IFs changes the bandgap energy and significantly affects the wave function overlap and the optical property of the samples. Transmission electron microscopy (TEM) measurements reveal that the T2SL IFs in Sample A are very rough compared to sharp IFs in Sample B, indicating a high possibility of atomic intermixing and segregation. Based on these results, it is believed that high-quality heterostructure could be achieved by controlling the IFs to enhance its structural and compositional homogeneities and the optical properties of the T2SLs.

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Heteroepitaxial integration of InAs/InAsSb type-II superlattice barrier photodetectors onto silicon

Cited by 3 publications

References 12 publications

Recent Progress in III–V Photodetectors Grown on Silicon

Recent Progress in III–V Photodetectors Grown on Silicon

Emerging Type‐II Superlattices of InAs/InAsSb and InAs/GaSb for Mid‐Wavelength Infrared Photodetectors

Effect of Interfacial Schemes on the Optical and Structural Properties of InAs/GaSb Type-II Superlattices

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