Bandgap-controlled non-equilibrium ZnO1−xSx thin films grown by pulsed laser deposition method

Choi, Heekyu; Kim, S.W.; Lee, M.H.; Kim, D.J.; Han, Sangil; Lee, W.; Song, Tae Kwon; Kim, M.-H.; Jeong, I.-K.; Kim, W.J.

doi:10.1016/j.tsf.2015.06.046

Cited by 6 publications

(1 citation statement)

References 24 publications

(25 reference statements)

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“…These results are in agreement with previous similar works reported using different deposition techniques: Cho et al used radiofrequency magnetron sputtering, [23] Choi et al used pulsed laser deposition, [24] and Lee et al used chemical vapor deposition. [25] Subbaiah [26] obtained ZnS films using close-spaced evaporation, which is the most similar approach to the HVTD used in this work.…”

Section: Grain-incident X-ray Diffraction (Gixrd)supporting

confidence: 93%

Zn(O,S) Buffer Layer Deposited by High Vapor Transport Deposition for Controlling Band Alignment of Cu₂ZnSn(S_xSe_1−x)₄ Thin‐Film Solar Cell Heterojunction

et al. 2022

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The replacement of the CdS buffer layer is desirable for the development of nontoxic and environmentally friendly kesterite thin‐film solar cells. Band alignment is critical to the energy conversion of solar cells and achieving optimum design of the layers requires high control of the process. Herein, the band alignment dependence of the CZTSSe/Zn(O,S) interface using different oxygen concentrations is reported, which results in a high controllability process for the energy levels of the buffer layers, which is desirable to achieve higher solar cell efficiencies. It is also demonstrated that a Zn(O,S) thin‐film layer can be deposited using a novel process: high vapor transport deposition. The main advantages observed are as follows: 1) absorber and buffer layers can be deposited in the same vacuum reactor, thus avoiding atmospheric contamination; 2) no additional etching or annealing process is needed; and 3) the process conditions have accuracy control of gas injection, which allows precise tuning of the oxygen content in the film. Optimal oxygen concentration is determined to avoid spike‐like CBO, achieving a conversion efficiency level of 6.87% for kesterite‐based thin‐film solar cells with a Cd‐free buffer layer.

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Section: Grain-incident X-ray Diffraction (Gixrd)supporting

confidence: 93%

Zn(O,S) Buffer Layer Deposited by High Vapor Transport Deposition for Controlling Band Alignment of Cu₂ZnSn(S_xSe_1−x)₄ Thin‐Film Solar Cell Heterojunction

et al. 2022

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Behavior and impact of sulfur incorporation in Zinc Oxysulfide alloy grown by metal organic chemical vapor deposition

Tang

Mao

et al. 2018

Applied Surface Science

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Analysis of vertical phase distribution in reactively sputtered zinc oxysulfide thin films

Cho

Lee

Shin

et al. 2019

Applied Surface Science

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Bandgap-controlled non-equilibrium ZnO1−xSx thin films grown by pulsed laser deposition method

Cited by 6 publications

References 24 publications

Zn(O,S) Buffer Layer Deposited by High Vapor Transport Deposition for Controlling Band Alignment of Cu₂ZnSn(S_xSe_1−x)₄ Thin‐Film Solar Cell Heterojunction

Zn(O,S) Buffer Layer Deposited by High Vapor Transport Deposition for Controlling Band Alignment of Cu₂ZnSn(S_xSe_1−x)₄ Thin‐Film Solar Cell Heterojunction

Behavior and impact of sulfur incorporation in Zinc Oxysulfide alloy grown by metal organic chemical vapor deposition

Analysis of vertical phase distribution in reactively sputtered zinc oxysulfide thin films

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Bandgap-controlled non-equilibrium ZnO1−xSx thin films grown by pulsed laser deposition method

Cited by 6 publications

References 24 publications

Zn(O,S) Buffer Layer Deposited by High Vapor Transport Deposition for Controlling Band Alignment of Cu2ZnSn(SxSe1−x)4 Thin‐Film Solar Cell Heterojunction

Zn(O,S) Buffer Layer Deposited by High Vapor Transport Deposition for Controlling Band Alignment of Cu2ZnSn(SxSe1−x)4 Thin‐Film Solar Cell Heterojunction

Behavior and impact of sulfur incorporation in Zinc Oxysulfide alloy grown by metal organic chemical vapor deposition

Analysis of vertical phase distribution in reactively sputtered zinc oxysulfide thin films

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Product

Resources

About

Zn(O,S) Buffer Layer Deposited by High Vapor Transport Deposition for Controlling Band Alignment of Cu₂ZnSn(S_xSe_1−x)₄ Thin‐Film Solar Cell Heterojunction

Zn(O,S) Buffer Layer Deposited by High Vapor Transport Deposition for Controlling Band Alignment of Cu₂ZnSn(S_xSe_1−x)₄ Thin‐Film Solar Cell Heterojunction