Bandgap engineering in semiconductor quantum dots

Bandgap engineering of 1.3μm quantum dot structures for terahertz (THz) emission

“…Nevertheless, it is not recommended to reduce DE by further increase in h active since that will result in the presence of large islands that are nonradiative and act as sinks for the generated carriers, thus degrading the device efficiency [23]. Alternatively, one can perform postgrowth annealing since that was shown to effectively reduce DE and, at the same time, improve the material quality [24].…”