Post-Growth Intermixing of GaAs Based Quantum Dot Devices

Zhang, Ziyang; Hogg, R. A.

doi:10.1007/978-1-4614-3570-9_6

Cited by 2 publications

(1 citation statement)

References 56 publications

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“…Compared with the traditional re-growth and selective area growth technique, rapid thermal annealing (RTA) provides a low-cost, simple, and powerful way to tune and enhance the structural and optical qualities of nanostructures, such as the bandgap energy, confinement, and absorption, and offers a potential route to develop new types of devices and integrated optoelectronic circuits. 1 For example, Sengupta et al 2 reported tuning of the detection wavelength of infrared photodetectors, Zhang et al 3 showed an improvement on the bandwidth of superluminescent diodes, while Tatebayashi et al 4 and Li et al 5 demonstrated the control of the lasing wavelength of quantum dot (QD) lasers. In addition, rapid thermal annealing has been used to reduce the defects generated by low-temperature growth 6 or lattice mismatch.…”

Section: Introductionmentioning

confidence: 99%

The effect of post-growth rapid thermal annealing on InAs/InGaAs dot-in-a-well structure monolithically grown on Si

Chen

et al. 2019

Journal of Applied Physics

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The effect of post-growth annealing (PGA) on dot-in-well (DWELL) structures grown on Si substrates has been studied. The photoluminescence (PL) measurements showed that, compared to the DWELL structures directly grown on GaAs, the PGA process induces a distinct difference in the tuning of the emission properties. Then, transmission electron microscopy imaging of the samples revealed that PGA improved the uniformity of quantum dots (QDs) while the size of the QDs increased, in agreement with a corresponding red shift and a decrease of the full width at half maximum in the PL emission spectrum. Finally, energy-dispersive x-ray linescan provided a quantitative analysis of the composition change of DWELL grown on Si in the as-grown, 700°C annealed, and 800°C annealed samples. The change in the In L /Ga K concentration ratio became gradual between the QDs and surrounding materials after 800°C annealing. The analysis of the optical properties, morphology evolution, and compositional change of the QDs as a function of the annealing temperature showed good agreement.

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Section: Introductionmentioning

confidence: 99%

The effect of post-growth rapid thermal annealing on InAs/InGaAs dot-in-a-well structure monolithically grown on Si

Chen

et al. 2019

Journal of Applied Physics

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Low-threshold visible InP quantum dot and InGaP quantum well lasers grown by molecular beam epitaxy

Dhingra

Muhowski

et al. 2023

Journal of Applied Physics

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III-V lasers based on self-assembled quantum dots (QDs) have attracted widespread interest due to their unique characteristics, including low threshold current density (Jth), low sensitivity to backreflections, and resistance to threading dislocations. While most work to date has focused on 1.3 μm InAs/GaAs QDs, InP QDs have also aroused interest in lasers emitting at visible wavelengths. Molecular beam epitaxy (MBE) enables the growth of high-density InP/AlGaInP QDs on exact (001)-oriented GaAs substrates but requires a relatively low substrate temperature of <500 °C. The low substrate temperature used for phosphide growth in MBE leads to degraded optical properties and makes post-growth annealing a crucial step to improve the optical quality. Here, we report the exceptional thermal stability of InP/AlGaInP QDs grown using MBE, with up to 50× improvement in room temperature photoluminescence intensity with the optimization of annealing temperature and time. We also demonstrate the room temperature pulsed operation of InP multiple quantum dot (MQD) lasers on GaAs (001) emitting close to 735 nm with Jth values of 499 A/cm2 after annealing, a factor of 6 lower than their as-grown counterparts and comparable to such devices grown by MOCVD. In0.6Ga0.4P single quantum well (SQW) lasers on GaAs (001) also exhibit a substantial reduction in Jth from 340 A/cm2 as-grown to 200 A/cm2 after annealing, emitting at 680 nm under pulsed operation conditions. This work shows that post-growth annealing is essential for realizing record-performance phosphide lasers on GaAs grown by MBE for applications in visible photonics.

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Post-Growth Intermixing of GaAs Based Quantum Dot Devices

Cited by 2 publications

References 56 publications

The effect of post-growth rapid thermal annealing on InAs/InGaAs dot-in-a-well structure monolithically grown on Si

The effect of post-growth rapid thermal annealing on InAs/InGaAs dot-in-a-well structure monolithically grown on Si

Low-threshold visible InP quantum dot and InGaP quantum well lasers grown by molecular beam epitaxy

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