2021
DOI: 10.1016/j.matchemphys.2020.123791
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Bandgap narrowing of Ba0.92Na0.04Bi0.04TiO3 ferroelectric ceramics by transition metals doping for photovoltaic applications

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Cited by 44 publications
(19 citation statements)
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“…Finally, the A 1 (LO 3 ) mode was correlated with octahedral distortion in the ferroelectric phase [39][40][41]. The broadening of the A 1 (TO 3 ) mode after irradiation was due to the overlap of the different modes [42]. Interestingly, most Raman modes shift to lower wavenumbers after gamma irradiation, which could be attributed to the shift of Ti cations or octahedral distortion [43][44][45][46] (see Figure 3 and Table 2).…”
Section: Resultsmentioning
confidence: 99%
“…Finally, the A 1 (LO 3 ) mode was correlated with octahedral distortion in the ferroelectric phase [39][40][41]. The broadening of the A 1 (TO 3 ) mode after irradiation was due to the overlap of the different modes [42]. Interestingly, most Raman modes shift to lower wavenumbers after gamma irradiation, which could be attributed to the shift of Ti cations or octahedral distortion [43][44][45][46] (see Figure 3 and Table 2).…”
Section: Resultsmentioning
confidence: 99%
“…In the field of photovoltaics, narrow bandgap (less than 3 eV) ferroelectric thin film materials are gaining more and more attention from researchers because of features such as good carrier transport and strong visible‐infrared absorption, stable working performance and low manufacturing cost. [ 26,49–51 ]…”
Section: Methodsmentioning
confidence: 99%
“…Ferroelectric materials are generally considered to be wide bandgap semiconductors with bandgaps between 3.0 and 3.8 eV, [24][25][26][27][28][29] and their low absorption coefficient and photocurrent density limit the photovoltaic applications of ferroelectric materials. [30] As shown in Figure 1, photovoltaic materials with a bandgap of 1.0-1.8 eV can absorb the solar spectrum with maximum efficiency (Figure 1a,b), [31] and hexagonal ferrites (h-RFOs) with a narrow bandgap (1.1-2.0 eV) can absorb light in a very wide range of wavelengths (Figure 1c,d).…”
Section: Introductionmentioning
confidence: 99%
“…Tais mudanças na composição e no arranjo estrutural podem causar mecanicamente tensões internas na partícula e eletronicamente mudança na estrutura de bandas. Tais novos arranjos -mecânico e eletrônico -resultam na diferença de sobreposição dos orbitais, infl uenciando assim na semicondutividade, isto é, na possível diminuição do gap energético (Alkathy et al, 2021).…”
Section: Características óPtica E Eletrônicaunclassified