Bandgap opening in oxygen plasma-treated graphene

Nourbakhsh, Amirhasan; Cantoro, Mirco; Vosch, Tom; Pourtois, Geoffrey; Clemente, Francesca; Veen, Marleen H. van der; Hofkens, Johan; Heyns, Marc; Gendt, Stefan De; Sels, Bert F.

doi:10.1088/0957-4484/21/43/435203

Cited by 310 publications

(255 citation statements)

References 82 publications

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“…It therefore is to be expected that also metastable oxidized vacancies with a finite magnetic moment are present in real samples, in agreement with the observations reported in ref. 9. A further reaction path analysis should be performed in order to shed further light on this issue.…”

Section: Discussionmentioning

confidence: 99%

“…9 This aging mechanism, which is of particular technological importance, has been attributed to oxygen decoration (i.e. single oxygen atoms are placed midway above C-C bonds).…”

Section: 8mentioning

confidence: 99%

“…However, such a model cannot explain simultaneous indications of a p-type state. 9 It consequently seems likely that the metal-semiconductor transition is related to modifications of magnetic vacancies. In this context, we study the oxidation of graphene by oxygen molecules by means of first principles calculations.…”

Section: 8mentioning

confidence: 99%

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Oxidation of monovacancies in graphene by oxygen molecules

et al. 2011

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CitationKaloni TP, Cheng YC, Faccio R, Schwingenschlögl U We study the oxidation of monovacancies in graphene by oxygen molecules using first principles calculations. In particular, we address the local magnetic moments which develop at monovacancies and show that they remain intact when a molecule is adsorbed such that the dangling carbon bonds are not fully saturated. However, the lowest energy configuration does not maintain dangling bonds and is found to be semiconducting. Our data can explain the experimentally observed behavior of graphene under exposure to an oxygen plasma.

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Section: Discussionmentioning

confidence: 99%

“…9 This aging mechanism, which is of particular technological importance, has been attributed to oxygen decoration (i.e. single oxygen atoms are placed midway above C-C bonds).…”

Section: 8mentioning

confidence: 99%

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Oxidation of monovacancies in graphene by oxygen molecules

et al. 2011

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“…As shown in Figure 2, the band gap of 3.2 eV may be close to the real value. Porous graphene is particularly attractive since many efforts have been made to open a gap in the band structure of graphene for practical applications [29][30][31][32][33]. Unfortunately, the band gap is rather large in polyphenylene-type porous graphene.…”

Section: Electronic Properties Of Porous Graphenementioning

confidence: 99%

Porous graphene: Properties, preparation, and potential applications

et al. 2012

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Graphene has recently emerged as an important and exciting material. Inspired by its outstanding properties, many researchers have extensively studied graphene-related materials both experimentally and theoretically. Porous graphene is a collection of graphene-related materials with nanopores in the plane. Porous graphene exhibits properties distinct from those of graphene, and it has widespread potential applications in various fields such as gas separation, hydrogen storage, DNA sequencing, and supercapacitors. In this review, we summarize recent progress in studies of the properties, preparation, and potential applications of porous graphene, and show that porous graphene is a promising material with great potential for future development.graphene, porous graphene, electronic structure, gas separation, DNA sequencing Citation:Xu P T, Yang J X, Wang K S, et al. [9] have made the preparation of large-area graphene feasible. The most intriguing aspect of graphene is its extraordinary properties. Graphene, which is constructed by strong sp 2 covalent bonds, is believed to be the strongest material ever measured [10]. Experiments have revealed that graphene exhibits a high ambipolar electric-field effect at room temperature, better conductivity than any other known material [3], and many other novel properties, including room-temperature quantum Hall effects, mass-less Dirac electrons near the K point, and high mobility of carriers (10 6 m s −1 , close to the speed of light) [11][12][13]. All these properties distinguish graphene from ordinary materials, and make graphene an ideal candidate for the manufacture of electronic devices. To develop a full understanding of its nature and realize the full potential of graphene, extensive investigations have proceeded in various directions. For instance, the electronic and magnetic properties of graphene can be modified by hydrogenation [14] and doping [15]. Another research area, porous graphene, has also attracted increasing attention recently. Porous graphene is a collection of graphene-related materials with nanopores in the plane. Depending on the production techniques used, the pore size ranges from atomic precision to nanoscale. As a result of the nanopores in the graphene plane, porous graphene exhibits properties distinct from those of pristine graphene, leading to its potential applications in numerous

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“…Many studies have been conducted on elemental adsorption on graphene, such as H [6,7]; Be [8]; O [9][10][11][12][13]; F [7,14]; Si [15][16][17]; Na [18]; Mg [19,20]; Cl [7,21]; noble gases [22]; Ca [23];…”

Section: Introductionmentioning

confidence: 99%

Geometrical and orientational investigations on the electronic structure of graphene with adsorbed aluminium or silicon

et al. 2016

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orientational investigations on the electronic structure of graphene with adsorbed aluminium or silicon, (2015), doi: 10.1016/j.matdes.2015.09.111 This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting proof before it is published in its final form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain. In this contribution, we deployed DFT periodic slab calculations to investigate effect of orientational dependence of Al-and Si-adsorbed graphene systems. We utilized 2 × 2 and 2 × 3 graphene supercells with 1:8 (Al, Si : C) atomic ratios. We observed that the relative orientation of adsorbent atoms exerts profound influence on electronic structures in conjunction with a matching effect caused by the distinct adsorption sites (i.e. bridge, hollow or top). The orientation effects of Si-adsorbed graphene on electronic structure are greater than their Al analogous structures. We anticipate our finding herein, of low adatom concentration on graphene, to prompt re-examination of metal-graphene systems to account for the previously unnoticed -but significant -orientational effect that adds an additional degree of freedom to elemental adsorption on graphene.

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Bandgap opening in oxygen plasma-treated graphene

Cited by 310 publications

References 82 publications

Oxidation of monovacancies in graphene by oxygen molecules

Oxidation of monovacancies in graphene by oxygen molecules

Porous graphene: Properties, preparation, and potential applications

Geometrical and orientational investigations on the electronic structure of graphene with adsorbed aluminium or silicon

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