Bandgap trimming and optical properties of Si<sub>3</sub>N<sub>4</sub>:Al microbelt phosphors for warm white light-emitting diodes

Shen, Dongyi; Shao, Yuchuan; Zhu, Yingchun

doi:10.1039/c9ce01486a

Cited by 6 publications

(3 citation statements)

References 46 publications

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“…Also, it can be explained that based on its properties, Si3N4 exhibits the highest EQE due to the fact Si3N4 is a common nitride-based compound and given its relatively easy production and affordable cost of raw materials, this material is an excellent potential material for possible uses in the solid-state lighting field [25]. Besides Si3N4, ZnO also comes close as the 2 nd highest EQE because ZnO possesses a refractive index close to 2, a broad optical bandgap in the range of 3.3 to 3.7 eV, is readily apparent in the area of visible light, and has strong adhesion and hardness making ZnO is a particularly promising for antireflection coating of silicon solar cells [26].…”

Section: Resultsmentioning

confidence: 99%

Numerical Modelling of High Efficiency Silicon Solar Cell Using Various Anti Reflective Coatings (ARC)

Jamaluddin,

Yusoff,

Malek

2024

Trends Sci

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The growing prevalence of solar in recent years, which is applied in practically every daily item comprehensively and broadly to make it simpler on consumers due to the consumption of solar resulting in a lot of savings. Anti-reflective coating (ARC) is one of the most important factors contributing to the extensive application of solar. It was acknowledged that ARC had been applied on solar cells to minimize reflection loss, enhance absorption, and boost power conversion efficiency (PCE). The efficiency of solar cell varies depending on the type of ARC material used and its specific characteristics. Since each anti-reflective coating originates from its own formula, there are many different materials produced and manufactured to be applied on solar cells. Hence, in this paper, the simulation of 6 different materials of anti-reflective coating (ARC) coatings has been analyzed and investigated using PC1D simulation software. The outcomes revealed that the ideal wavelength for developing and constructing an ARC would be around 500 and 800 nm. Silicon nitrite (Si3N4) would be the best ARC for designing a single-layer ARC due to its highest efficiency of 21.69 % and exhibits the lowest reflectance, closely followed by zinc oxide (ZnO) which has the efficiency of 21.67 %. Then, zinc sulphate (ZnS) and Titanium Oxide (TiO2) has the efficiency of 21.16 and 21.05 % respectively. While, the silicon dioxide (SiO2) has an efficiency of 20.23 % and lastly, silicon carbide (SiC) has lowest efficiency of 17.07 %. Based on the PC1D simulation software carried out in this research, the data and outcomes regarding the voltage, current, maximum power output, solar efficiency, fill factor, reflectivity, and external quantum efficiency are also reported. HIGHLIGHTS The ARC material and its properties affect solar cell efficiency This study used PC1D simulation software to evaluate 6 anti-reflective coating (ARC) materials The results showed that 500 - 800 nm is the best wavelength for ARC development and construction Silicon nitrite (Si3N4) ARC has the highest efficiency (21.69 %) and lowest reflectance, making it ideal for single-layer ARCs GRAPHICAL ABSTRACT

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Section: Resultsmentioning

confidence: 99%

Numerical Modelling of High Efficiency Silicon Solar Cell Using Various Anti Reflective Coatings (ARC)

Jamaluddin,

Yusoff,

Malek

2024

Trends Sci

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“…Wide-band gap binary semiconductors, such as SiC, GaN, AlN, Ga 2 O 3 , and Si 3 N 4 , have important applications in high-voltage devices, solar-blind photodetectors, and waveguide devices. − Their attributes like high optical transparency, tunable electronic conductivity, and controllable carrier concentration make them attractive in consumer electronics, renewable energy, and transportation. − These materials have wide energy band gaps ( E g ), which make them suitable for optoelectronic applications and photophysical studies in the 100–400 nm ultraviolet (UV) spectral range . Nitrides, in particular, exhibit potential for UV nonlinear optical (NLO) frequency conversion, such as second harmonic generation (SHG), due to their tunable E g and extensive coordination anionic motifs .…”

Section: Introductionmentioning

confidence: 99%

Wide-Band Gap Binary Semiconductor P₃N₅ with Highly Anisotropic Optical Linearity and Nonlinearity

Li,

Yan,

Lin

et al. 2024

Inorg. Chem.

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Wide-band gap binary semiconductors find extensive use in advanced optoelectronic devices due to their exceptional electronic, optical, and defect properties. This paper systematically investigates the linear and nonlinear optical and defect properties of two P 3 N 5 structures as wide-band gap binary semiconductors and evaluates their responses to external pressure modulation using first-principles calculations. The research demonstrates that the high-pressure phase of P 3 N 5 has a broad UV solar-blind band gap (E g ∼ 4.9 eV) and displays highly anisotropic optical linearity and nonlinearity, including a significant second harmonic generation effect (d 24 ∼ 1.8 pm/V) and large birefringence (Δn ∼ 0.12), exhibiting a relatively small change in amplitude against pressure due to unique lattice incompressibility. This material enables birefringent phase-matched second harmonic coherent output at a much shorter wavelength (down to 286 nm) than currently known wide-band gap binary semiconductors such as SiC, GaN, AlN, Ga 2 O 3 , and Si 3 N 4 . An in-depth study of the defect properties of P 3 N 5 in relation to its UV optical properties is also provided. These results are important references for utilizing the optoelectronic functions of this binary material system.

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“…Their excellent physicalchemical properties and tunable energy bandgap (E g ) over a wide range make them ideal for these applications. Typical wide-bandgap nitride semiconductors include the thirdgeneration semiconductor GaN [2], ultraviolet (UV) light-emitting material AlN [3] or its solid-solution structure (Ga,Al)N [4], graphene-like layered material h-BN [5], and ceramic material Si 3 N 4 [6]. The wide-bandgap E g rendered the aforementioned materials naturally suitable for use in optoelectronic applications and the study of light-matter interaction in the UV band (100~400 nm).…”

Section: Introductionmentioning

confidence: 99%

Nitride Wide-Bandgap Semiconductors for UV Nonlinear Optics

Li,

Kang

2023

Crystals

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Nitride wide-bandgap semiconductors possess a wide tunable energy bandgap and abundant coordination anionic groups. This suggests their potential to display nonlinear optical (NLO) properties in the UV wavelength spectrum. This paper reports recent progress and material discoveries in exploring UV NLO structures using nitrides. The study emphasizes their underlying structure–property correlations in order to provide a summary of the potential performance and application value of important nitride NLO crystals. Additionally, the text underscores the benefits of nitrides in terms of optical transparency, second-harmonic-generation effects, and the birefringent phase matching the output wavelength limits, while addressing current issues in terms of theoretical outlook and experimental exploration.

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Bandgap trimming and optical properties of Si₃N₄:Al microbelt phosphors for warm white light-emitting diodes

Abstract: The bandgap energy of Si3N4:Al is precisely and gradually tailored from 2.58 to 2.85 eV by increasing the Al concentration. Si3N4:Al:Eu phosphors exhibiting a yellow-orange emission are promising for solid-state warm white lighting under blue chip excitation.

Cited by 6 publications

References 46 publications

Numerical Modelling of High Efficiency Silicon Solar Cell Using Various Anti Reflective Coatings (ARC)

Numerical Modelling of High Efficiency Silicon Solar Cell Using Various Anti Reflective Coatings (ARC)

Wide-Band Gap Binary Semiconductor P₃N₅ with Highly Anisotropic Optical Linearity and Nonlinearity

Nitride Wide-Bandgap Semiconductors for UV Nonlinear Optics

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Bandgap trimming and optical properties of Si3N4:Al microbelt phosphors for warm white light-emitting diodes

Abstract: The bandgap energy of Si3N4:Al is precisely and gradually tailored from 2.58 to 2.85 eV by increasing the Al concentration. Si3N4:Al:Eu phosphors exhibiting a yellow-orange emission are promising for solid-state warm white lighting under blue chip excitation.

Cited by 6 publications

References 46 publications

Numerical Modelling of High Efficiency Silicon Solar Cell Using Various Anti Reflective Coatings (ARC)

Numerical Modelling of High Efficiency Silicon Solar Cell Using Various Anti Reflective Coatings (ARC)

Wide-Band Gap Binary Semiconductor P3N5 with Highly Anisotropic Optical Linearity and Nonlinearity

Nitride Wide-Bandgap Semiconductors for UV Nonlinear Optics

Contact Info

Product

Resources

About

Bandgap trimming and optical properties of Si₃N₄:Al microbelt phosphors for warm white light-emitting diodes

Wide-Band Gap Binary Semiconductor P₃N₅ with Highly Anisotropic Optical Linearity and Nonlinearity