2012 IEEE International Meeting for Future of Electron Devices, Kansai 2012
DOI: 10.1109/imfedk.2012.6218611
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Bandgap widening of &#x03B2;-FeSi<inf>2</inf> deposited by RF-sputtering method using a Si-rich FeSi<inf>4</inf> target

Keiichiro Hiehata
1
,
Y. Shimamoto
2
,
Kazuhiro Nakamura
3
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