FeSi  films were deposited on Si(100) substrates at room temperature and at temperatures in the range of 100300°C using RFsputtering method with an FeSi 3 target. After deposition, FeSi  films were annealed at 400900°C for 10 min in Ar gas. The crystal quality of the films was analyzed by Xray diffraction (XRD) measurements, the surface of βFeSi 2 films was observed by an optical microscope and the film thickness was measured by surface stepmeasuring microscope. For the films deposited at 300°C and annealed over 800°C, Si(111) peak at 28.4° was superimposed on the βFeSi 2 (202/220) peak, which indicates that the films contained silicon crystals. On the other hand, for the films deposited at room temperature, Si(111) peak at 28.4° was not observed. No cracks were observed after annealing on the surface of the films deposited at 300°C although the films deposited at room temperature had cracks on the surfaces after annealing over 700°C. The major factor of cracks is considered to be the difference of the expansion coefficients between βFeSi 2 and silicon. For the film deposited at 300°C, a layer containing silicon crystals was formed near Si substrates. This layer served as a buffer between βFeSi 2 and silicon. Crackfree βFeSi 2 films on silicon substrates are required for the application to βFeSi 2 /Si heterojunction solar cells.In this study, FeSi  films were deposited on Si(100) substrates at room temperature and at temperatures in the range of 100300°C using RFsputtering method with an FeSi 3 target. After deposition, FeSi  films were annealed at temperatures in the range of 400900°C, and the influence of substrate heating during deposition on the FeSi  films was examined. The crystal quality of the films was analyzed by Xray diffraction (XRD) measurements, the surface of the βFeSi 2 films was observed by an optical microscope and the film thickness was measured by a surface step measuring microscope.  FeSi   films were deposited on ptype Si(100) substrates (38 cm) by RFsputtering method (RFS2 00: ULVAC) using a n FeSi 3 target of 99.9% purity. The RF power of 100 W was applied and the pressure of Ar sputter gas was kept at 0.47 P a during sputtering . D ur in g dep osition, t he 243Trans. Mat. Res. Soc. Japan 38[2] 243-247 (2013) 243

FeSi  films were deposited on Si (100) substrates by RFsputtering method using an FeSi 4 target. Postannealing was carried out at temperatures in the range of 400900°C for 10 min in Ar gas. The surface of FeSi  films was observed by optical microscope and crystal quality of the films was analyzed by Xray diffraction (XRD) measurement. Sheet resistance of the deposited films was measured by fourpoint probe method. The films deposited using an FeSi 4 target were completely transformed to βFeSi 2 after annealing over 500°C and Si (111) XRD peak was observed at 28.4° in the films annealed over 800°C. Cracks were not observed on the surface of the films annealed at as high as 900°C when deposited using an FeSi 4 target, although the films deposited using an FeSi 3 target had cracks on the surfaces after annealing over 700°C.

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