2005
DOI: 10.1109/tuffc.2005.1504016
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Bandpass filters for 8 GHz using solidly mounted bulk acoustic wave resonators

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Cited by 30 publications
(26 citation statements)
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“…However, the complex structures of the SPR and the high manufacturing cost of the QCM impose limits on the miniaturization and batch fabrication [4]. In recent years, the substantial progress in thin-film electroacoustic technology, such as film bulk acoustic resonators (FBARs), penetrates communication circuit applications [7]- [9] and biological/chemical sensing applications [10], [11]. The driving force of this development has been to replace the use of an expensive single crystalline substrate in the megahertz region with various piezoelectric thin films which would provide significantly higher frequencies (approximately in gigahertz) and integration capability with an integrated circuit to reduce manufacturing cost.…”
Section: Introductionmentioning
confidence: 99%
“…However, the complex structures of the SPR and the high manufacturing cost of the QCM impose limits on the miniaturization and batch fabrication [4]. In recent years, the substantial progress in thin-film electroacoustic technology, such as film bulk acoustic resonators (FBARs), penetrates communication circuit applications [7]- [9] and biological/chemical sensing applications [10], [11]. The driving force of this development has been to replace the use of an expensive single crystalline substrate in the megahertz region with various piezoelectric thin films which would provide significantly higher frequencies (approximately in gigahertz) and integration capability with an integrated circuit to reduce manufacturing cost.…”
Section: Introductionmentioning
confidence: 99%
“…(13) The Mason and Butterworth-Van Dyke (BVD) model equivalent circuits are used for determining the material parameters and resonance performance of a piezoelectric device. (14) By controlling each parameter, the effects of piezoelectric film thickness, material properties, or even the electrode active area on SMR performance can be investigated.…”
Section: Introductionmentioning
confidence: 99%
“…The advantages of the well known silicon micromachining technologies can be used and very thin GaN and AlN membranes can be manufactured. FBAR structures realized on an AlN/diamond layer, working at 8 GHz have been reported [1], a few years ago. In the case of GaN, the monolithic integration (with different passive and active circuit elements including high electron mobility transistors -HEMTs) is an exciting prospect.…”
Section: Introductionmentioning
confidence: 99%