Barium Zirconate Nickelate as the Gate Dielectric for Low-Leakage Current Organic Transistors

Lee, Cheng-Jung; Lee, Ke-Jing; Chang, Yu‐Chi; Wang, Liwen; Chou, Der-Wei; Wang, Yeong-Her

doi:10.1109/ted.2017.2786225

Cited by 5 publications

(4 citation statements)

References 35 publications

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“…Metal Oxide Thin Film Transistors (MOTFT) are a distinct class of metal-oxidesemiconductor field-effect transistors (MOSFET) fabricated by coating a layer of an active semiconductor layer, metallic contacts, and the dielectric layer over an insulating substrate. And, Printed Thin Film Transistors (TFT) are a major application of printed electronics [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20]. Solution processed inorganic oxide gate dielectric is key element for low voltage MOTFT.…”

Section: Introductionmentioning

confidence: 99%

“…Solution processed inorganic oxide gate dielectric is key element for low voltage MOTFT. It is a high performance device [1][2][3][4][5][6][7][8]. It is used in optoelectronics as next generation display, light emitting transistor, phototransistor, etc.…”

Section: Introductionmentioning

confidence: 99%

“…Solution processing is cheap and easily mass produced [2,3,8]. Popular ferroelectric MOSFET's are Lead Zinc Titanate (PZT), Lead Barium Zirconate (PBZ), Indium Zinc Oxide (IZO) and Barium Zinc Niobate (BZN) [4,5,7]. These oxides are used in random access memory (RAM) and display [1,2,5,6].…”

Section: Introductionmentioning

confidence: 99%

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Metal Oxide Thin Film Transistor with Nano Inorganic Gate Dielectric : Material Chemistry, Nanoscience, Solution Processing and Electronics

Raj¹

2021

JUSST

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Indium Lead Oxide (ILO) based Metal Oxide Thin Film Transistor (MOTFT) is fabricated with Lead Barium Zirconate (PBZ) gate dielectric. PBZ is formed over doped silicon substrate by cheap sol-gel process. Thin film PBZ is analysed with X-ray Diffraction (XRD), Ultra-Violet Visible Spectra (UV-Vis) and Atomic Force Microscope (AFM). IZO is used as bottom gate to contact Thin Film Transistor (TFT). This device needs only 5V as operating voltage, and so is good for lower electronics <40V. It shows excellent emobility 4.5cm2/V/s, with on/off ratio 5×105 and sub-threshold swing 0.35V/decade.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Metal Oxide Thin Film Transistor with Nano Inorganic Gate Dielectric : Material Chemistry, Nanoscience, Solution Processing and Electronics

Raj¹

2021

JUSST

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“…Owing to the leakage current of the transistor caused by a high resistive state (HRS) current of the 1T1R RRAM device, a suitable high-κ material that satisfies the sufficient wide bandgap and relatively low leakage current of the transistor is necessary to reduce the power consumption of the 1T1R RRAM device. The present study proposes a high-κ barium zirconate nickelate (BZN) dielectric layer for OTFT applications [ 3 ]. The gate leakage of the BZN-based OTFTs is reduced compared with barium zirconate oxide (BZO).…”

Section: Introductionmentioning

confidence: 99%

1T1R Nonvolatile Memory with Al/TiO2/Au and Sol-Gel-Processed Insulator for Barium Zirconate Nickelate Gate in Pentacene Thin Film Transistor

et al. 2017

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A one-transistor and one-resistor (1T1R) architecture with a resistive random access memory (RRAM) cell connected to an organic thin-film transistor (OTFT) device is successfully demonstrated to avoid the cross-talk issues of only one RRAM cell. The OTFT device, which uses barium zirconate nickelate (BZN) as a dielectric layer, exhibits favorable electrical properties, such as a high field-effect mobility of 2.5 cm2/Vs, low threshold voltage of −2.8 V, and low leakage current of 10−12 A, for a driver in the 1T1R operation scheme. The 1T1R architecture with a TiO2-based RRAM cell connected with a BZN OTFT device indicates a low operation current (10 μA) and reliable data retention (over ten years). This favorable performance of the 1T1R device can be attributed to the additional barrier heights introduced by using Ni (II) acetylacetone as a substitute for acetylacetone, and the relatively low leakage current of a BZN dielectric layer. The proposed 1T1R device with low leakage current OTFT and excellent uniform resistance distribution of RRAM exhibits a good potential for use in practical low-power electronic applications.

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Barium Titanate Nickelate Nanostructured Materials Prepared by Solution Process for Resistive Random Access Memory Application

Lee

Wang

et al. 2021

Journal of Elec Materi

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Barium Zirconate Nickelate as the Gate Dielectric for Low-Leakage Current Organic Transistors

Cited by 5 publications

References 35 publications

Metal Oxide Thin Film Transistor with Nano Inorganic Gate Dielectric : Material Chemistry, Nanoscience, Solution Processing and Electronics

Metal Oxide Thin Film Transistor with Nano Inorganic Gate Dielectric : Material Chemistry, Nanoscience, Solution Processing and Electronics

1T1R Nonvolatile Memory with Al/TiO2/Au and Sol-Gel-Processed Insulator for Barium Zirconate Nickelate Gate in Pentacene Thin Film Transistor

Barium Titanate Nickelate Nanostructured Materials Prepared by Solution Process for Resistive Random Access Memory Application

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