Strontium titanate nickelate (STN) thin films on indium tin oxide (ITO)/glass substrate were synthesized using the sol-gel method for resistive random access memory (RRAM) applications. Aluminum (Al), titanium (Ti), tungsten (W), gold (Au) and platinum (Pt) were used as top electrodes in the STN-based RRAM to probe the switching behavior. The bipolar resistive switching behavior of the set and reset voltages is in opposite bias in the Al/STN/ITO and Pt/STN/ITO RRAMs, which can be partly ascribed to the different work functions of top electrodes in the ITO. Analyses of the fitting results and temperature-dependent performances showed that the Al/STN/ITO switching was mainly attributed to the absorption/release of oxygen-based functional groups, whereas the Pt/STN/ITO switching can be associated with the diffusion of metal electrode ions. The Al/STN/ITO RRAM demonstrated a high resistance ratio of >106 between the high-resistance state (HRS) and the low-resistance state (LRS), as well as a retention ability of >105 s. Furthermore, the Pt/STN/ITO RRAM displayed a HRS/LRS resistance ratio of >103 and a retention ability of >105 s.

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Magnesium zirconate titanate (MZT) thin films, used as a sensing layer on Al interdigitated electrodes prepared using a sol–gel spin-coating method, are demonstrated in this study. The p-type MZT/Al/SiO2/Si structure for sensing NO2 is also discussed. The results indicated that the best sensitivity of the gas sensor occurred when it was operating at a temperature ranging from 100 to 150 °C. The detection limit of the sensor was as low as 250 ppb. The sensitivity of the MZT thin film was 8.64% and 34.22% for 0.25 ppm and 5 ppm of NO2 gas molecules at a working temperature of 150 °C, respectively. The gas sensor also exhibited high repeatability and selectivity for NO2. The response values to 250, 500, 1000, 1500, 2000, 2500, and 5000 ppb NO2 at 150 °C were 8.64, 9.52, 12, 16.63, 20.3, 23, and 34.22%, respectively. Additionally, we observed a high sensing linearity in NO2 gas molecules. These results indicate that MZT-based materials have potential applications for use as gas sensors.

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To effectively improve the uniformity of switching behavior in resistive switching devices, this study developed magnesium zirconia nickel (MZN) nanorods grown on ITO electrodes through hydrothermal method. The field emission scanning electron microscope image shows the NR formation. Al/MZN NR/ITO structure exhibits forming-free and bipolar resistive switching behaviors. MZN NRs have relatively higher ON/OFF ratio and better uniformity compared with MZN thin film. The superior properties of MZN NRs can be attributed to its distinct geometry, which leads to the formation of straight and extensible conducting filaments along the direction of MZN NR. The results suggest the possibility of developing sol–gel NR-based resistive memory devices.