Magnesium Zirconate Titanate Thin Films Used as an NO2 Sensing Layer for Gas Sensor Applications Developed Using a Sol–Gel Method

Abstract

Magnesium zirconate titanate (MZT) thin films, used as a sensing layer on Al interdigitated electrodes prepared using a sol–gel spin-coating method, are demonstrated in this study. The p-type MZT/Al/SiO2/Si structure for sensing NO2 is also discussed. The results indicated that the best sensitivity of the gas sensor occurred when it was operating at a temperature ranging from 100 to 150 °C. The detection limit of the sensor was as low as 250 ppb. The sensitivity of the MZT thin film was 8.64% and 34.22% for 0.25 ppm and 5 ppm of NO2 gas molecules at a working temperature of 150 °C, respectively. The gas sensor also exhibited high repeatability and selectivity for NO2. The response values to 250, 500, 1000, 1500, 2000, 2500, and 5000 ppb NO2 at 150 °C were 8.64, 9.52, 12, 16.63, 20.3, 23, and 34.22%, respectively. Additionally, we observed a high sensing linearity in NO2 gas molecules. These results indicate that MZT-based materials have potential applications for use as gas sensors.

Resistive Switching Memory Cell Property Improvement by Al/SrZrTiO3/Al/SrZrTiO3/ITO with Embedded Al Layer

“…The SZT thin film prepared in this experiment had an amorphous phase. Compared with the polycrystalline phase, the amorphous phase is preferred for dielectric layer materials because the former may lead to a high-grain boundary leakage current and a rough film surface [17]. The AFM images in Figure 2c,d reveal the surface morphology of the SZT and SZT/Al/SZT tri-layered thin films.…”

Effect of Alkaline Earth Metal on AZrOx (A = Mg, Sr, Ba) Memory Application

“…These devices operate without a forming process due to the presence of sufficient amorphous oxygen ions in the film [ 11 ]. Depending on the element selection the HRS values are different [ 25 , 26 , 27 ]. Both the reset voltage and HRS current values gradually increased with the atomic number of IIa group.…”

Effect of stoichiometry on the resistive switching characteristics of STO resistive memory

“…13 Recently, ion batteries, solar cells, gas sensors, and green devices have been developed using oxide-based materials. 14–16 Resistive memories fabricated using oxide materials such as SnO, ZnO, TiO 2 , CuO, AlON, Ta 2 O 5 , and SiO 2 have been verified to have superior nonvolatile memory characteristics. 2,3,17–27…”

“…13 Recently, ion batteries, solar cells, gas sensors, and green devices have been developed using oxide-based materials. [14][15][16] Resistive memories fabricated using oxide materials such as SnO, ZnO, TiO 2 , CuO, AlON, Ta 2 O 5 , and SiO 2 have been verified to have superior nonvolatile memory characteristics. 2,3,[17][18][19][20][21][22][23][24][25][26][27] Strontium titanate (SrTiO 3 , STO) is an inorganic lead-free perovskite material, which possesses the benefits of non-toxic nature, wide bandgap, and high thermal stability.…”