1997
DOI: 10.1002/(sici)1097-4628(19970425)64:4<699::aid-app9>3.0.co;2-i
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Barrier behavior hindering Zn++ diffusion from cold remote nitrogen plasma-deposited silicon films

Abstract: Cold remote nitrogen plasma (CRNP) process is used to deposit organosiloxane polymeric films. 1,1,3,3-tetramethyldisiloxane (TMDS) or its mixture with oxygen is used to deposit polymeric layers on a rubber disks at ambient temperature. The deposited films appear to be efficient against chemical agents diffusion from the disks to a distilled water surrounding phase. The barrier efficiency is increased for films deposited from a TMDS/O 2 mixture. The extracted quantity of Zn // after 30 days of immersion in dist… Show more

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Cited by 9 publications
(3 citation statements)
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“…In the procedure of plasma polymerization of organosilicon, the film polymerized on the substrate surface starts to grow when the long-lasting reactive particles, flowing from the microwave discharge, had enough energy to break the chemical bonds and create free radicals implied in the film formation (Callebert et al 1994;Karam et al 2013). The deposition zone, where CRNP appears as a yellow afterglow, is a non-ionized zone mostly formed with reactive species like nitrogen atoms in the ground electronic state N(4S), free radicals, and electronically excited N 2 triplet states and vibrationally excited N 2 in the ground electronic state (Jama et al 1997;Quédé et al 2002;Esbayou et al 2018).…”
Section: Cold Plasma Treatments Of Materials For Preventing Bacterial Adhesionmentioning
confidence: 99%
“…In the procedure of plasma polymerization of organosilicon, the film polymerized on the substrate surface starts to grow when the long-lasting reactive particles, flowing from the microwave discharge, had enough energy to break the chemical bonds and create free radicals implied in the film formation (Callebert et al 1994;Karam et al 2013). The deposition zone, where CRNP appears as a yellow afterglow, is a non-ionized zone mostly formed with reactive species like nitrogen atoms in the ground electronic state N(4S), free radicals, and electronically excited N 2 triplet states and vibrationally excited N 2 in the ground electronic state (Jama et al 1997;Quédé et al 2002;Esbayou et al 2018).…”
Section: Cold Plasma Treatments Of Materials For Preventing Bacterial Adhesionmentioning
confidence: 99%
“…The elastic properties of this system can absorb the energy of indentation during the scratch test with a stress level below the limit of decohesion. [33][34][35] CRNP-assisted polymerisation of tetramethyl disiloxane (TMDS) monomers mixed with oxygen allows to obtain a polysiloxane film. Reactions involving hydrogen abstraction by N( 4 S) attack lead to the formation of radicals [33] such as:…”
Section: Hard Nitriding Coatingsmentioning
confidence: 99%
“…It was shown [34,35] that a polysiloxane film (5 µm thick) was an efficient barrier against Zn 2+ diffusion from pharmaceutical rubber cups towards drug liquid phase. For a material (elastomer) containing 2.5-wt% ZnO, the extracted Zn 2+ quantity is decreased by ≈70% after an immersion for 30 days.…”
Section: Polysiloxanes Filmsmentioning
confidence: 99%