Barrier height enhancement and stability of the Au∕n-InP Schottky barrier diodes oxidized by absorbed water vapor

Abstract

We have fabricated the Au/ n-InP Schottky barrier diodes ͑SBDs͒ with and without an intentionally grown interfacial oxide layer. The oxide layer on chemically cleaned indium phosphide ͑InP͒ surface has been obtained by exposure to water vapor at 1 ml/ min at 200°C before metal evaporation. The chemical composition of the surface oxides grown on the InP is investigated using x-ray photoelectron spectroscopy. Phosphorus is present as In͑PO 3 ͒ 3 , InPO 4 , P 2 O 5 and elemental P. The influence of the oxide on the Schottky barrier formation and contact stability at the InP ͑100͒ surface upon subsequent metal deposition has been investigated. The transport properties of the metal-semiconductor contacts have been observed to be significantly affected by the presence of the interfacial oxide layer. Thus, the barrier height has been increased by ϳ140 meV for the Au/ n-InP SBD by means of the interfacial oxide grown by use of absorbed water vapor. Furthermore, in order to observe the effect of the aging in the Au/ n-InP SBD with and without the interfacial oxide layer, the current-voltage ͑I-V͒ measurements have also been repeated 7, 14, 28, 45, 56, and 70 days after fabrication of these diodes. The obtained diode parameters were examined statistically and it was found that the reference and oxidized Au/ n-InP SBDs exhibited stable characteristics 14 days after metal deposition.

Electronic Properties of Cu/n-InP Metal-Semiconductor Structures with Cytosine Biopolymer

“…where N c = 4.9 × 10 17 cm −3 is the eective density of states in the conduction band [28]. Figure 7 shows the CV characteristics of the Cu/cytosine/n-InP structure at various frequencies.…”

Effect of annealing temperature on the electrical, structural and surface morphological properties of Ru/Ti Schottky contacts on n -type InP

“…This may be due to the formation of Ru-In and Ti-In intermetallic compounds at the interface. The increase in barrier height may be due to increase in negative charges at the interface that probably arises due to electron traps localized at the InP surface and associated with In vacancies created near the surface [35]. It is noted that the barrier heights decreased upon annealing at 200°C and 400°C.…”

Schottky Barrier Parameters and Interfacial Reactions of Rapidly Annealed Au/Cu Bilayer Metal Scheme on N-type InP

“…Group III-V compound semiconductors, particularly, indium phosphide (InP) are promising materials for the fabrication of high-speed electronic and optoelectronic devices due to their large band gap, high electron mobility, high saturation velocity and break down voltage, which are important in electron devices [1][2][3][4][5][6]. Metal-semiconductor (MS) contact is one of the most widely used rectifying contacts in the electronics industry [2][3][4]. However, the fabrication of InP Schottky barrier devices has been hindered by inherently low barrier heights (BHs) of Schottky contacts, poor stability, and a large reverse leakage current.…”