2015
DOI: 10.1016/j.spmi.2015.07.068
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Effect of annealing temperature on the electrical, structural and surface morphological properties of Ru/Ti Schottky contacts on n -type InP

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Cited by 7 publications
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“…The GO interlayer in‐between Ti Schottky layer and InP semiconductor is used for increasing the BH so as to decrease the interface state density as indicated at previous works. [ 16–18 ]…”
Section: Introductionmentioning
confidence: 99%
“…The GO interlayer in‐between Ti Schottky layer and InP semiconductor is used for increasing the BH so as to decrease the interface state density as indicated at previous works. [ 16–18 ]…”
Section: Introductionmentioning
confidence: 99%